Semiconductor device having a trench isolation and method of fabricating the same

ABSTRACT

The present invention provides a method of fabricating a semiconductor device in which deterioration in a transistor characteristic is prevented by preventing a channel stop implantation layer from being formed in an active region. A resist mask is formed so as to have an opening over a region in which a PMOS transistor is formed. Channel stop implantation is performed with energy by which ions pass through a partial isolation oxide film and a peak of an impurity profile is generated in an SOI layer, thereby forming a channel stop layer in the SOI layer under the partial isolation oxide film, that is, an isolation region. An impurity to be implanted here is an N-type impurity. In the case of using phosphorus, its implantation energy is set to, for example, 60 to 120 keV, and the density of the channel stop layer is set to 1×10 17  to 1×10 19 /cm 3 . At this time, the impurity of channel stop implantation is not stopped in the SOI layer corresponding to the active region.

This application is a Divisional Application of Ser. No. 11/011,655filed Dec. 15, 2004 which is a Division of Ser. No. 10/237,022 filedSep. 09, 2002 and claims the benefit of priority from the prior JapanesePatent Application No. 2001-387522, filed Dec. 20, 2001, the entirecontents of both of which are incorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor device and, moreparticularly, to a method of fabricating a semiconductor device having atrench isolation oxide film.

2. Related Background Art

A semiconductor device of an SOI (Silicon On Insulator) structure(hereinbelow, called an SOI device) formed on an SOI substrate in whicha buried oxide film and an SOI layer are formed on a silicon substratehas characteristics such as reduced parasite capacity, high-speedoperation, and low power consumption and is used for a portable deviceand the like.

Also for a bulk device directly formed on a silicon substrate,microfabrication technology and high integration technique progressconspicuously, and the speed of development of the bulk device isincreasing.

In association with a progress of a device technique, the concentrationof a channel impurity and that of a source/drain impurity are gettinghigher and, moreover, a sharp impurity profile is requested more andmore. Consequently, there is a tendency that heat treatment afterimplanting impurities is performed at low temperature in short time.

On the other hand, for a device having a trench isolation structureformed by filling a trench in a silicon layer with an insulatingmaterial, heat treatment at high temperature for long time isindispensable to form the isolation structure.

As an example of the SOI device, FIG. 92 shows a partial sectionalconfiguration of an SOI device 70 in which MOS transistors areelectrically isolated from each other by a trench.

In FIG. 92, in an SOI substrate in which a buried oxide film 102 and anSOI layer 103 are formed on a silicon substrate 101, an N-channel typeMOS transistor (NMOS transistor) NMI and a P-channel type MOS transistor(PMOS transistor) PM1 are formed on SOI layer 103 and are electricallycompletely isolated from each other by an isolation oxide film 104.Isolation oxide film 104 is provided so as to surround NMOS transistorNMI and PMOS transistor PM1.

Each of NMOS transistor NMI and PMOS transistor PM1 is constructed by asource/drain region SD formed in SOI layer 103, a channel forming regionCH, a gate oxide film GO formed on channel forming region CH, a gateelectrode GT formed on gate oxide film GO, and a side wall oxide film SWcovering side faces of gate electrode GO.

In SOI device 70, NMOS transistor NMI and PMOS transistor PM1 are notonly independent of each other by isolation oxide film 104 in SOI layer103 but also completely isolated from other semiconductor devices andthe like. The SOI device 70 has, therefore, a structure in whichlatch-up does not occur in the transistors in theory.

In the case of fabricating an SOI device having a CMOS transistor, thereis consequently an advantage that the minimum isolation width determinedby the microfabrication technology can be used and the chip area can bereduced. However, there are various problems caused by a substratefloating effect, such as accumulation of carriers (holes in the NMOS)generated by an impact ionization in the channel forming region,occurrence of a kink due to the accumulated carriers, deterioration inoperation breakdown voltage resistance, and occurrence of frequencydependency of delay time caused by an unstable potential of the channelforming region.

Consequently, a partial trench isolation structure has been devised.FIG. 93 shows a partial sectional configuration of an SOI device 80having a partial trench isolation structure (PTI structure).

In FIG. 93, NMOS transistor NM1 and PMOS transistor PM1 are provided onSOI layer 103 and are isolated from each other by a partial isolationoxide film 105 under which a well region WR is formed. Partial isolationoxide film 105 is disposed so as to surround NMOS transistor NM1 andPMOS transistor PM1.

A structure for electrically completely isolating devices by a trenchoxide film reaching buried oxide film 102 like isolation oxide film 104in SOI device 80 will be called a full trench isolation structure (FTIstructure) and the oxide film will be called a full isolation oxidefilm.

Although NMOS transistor NM1 and PMOS transistor PM1 are isolated fromeach other by partial isolation oxide film 105, carries can move viawell region WR under partial isolation oxide film 105. The carriers canbe prevented from being accumulated in a channel forming region, and thepotential of the channel forming region can be fixed via well region WR.Consequently, there is an advantage such that the various problems dueto the substrate floating effect do not occur.

As an SOI device having a PTI structure with further improvedreliability of a MOS transistor, a MOS transistor 90 to be describedhereinbelow can be mentioned. A method of fabricating MOS transistor 90will be described hereinbelow with reference to FIGS. 94 to 101. Theconfiguration of MOS transistor 90 is shown in FIG. 101 for explainingthe final process.

First, as shown in FIG. 94, by an SIMOX method for forming buried oxidefilm 102 by oxygen ion implantation, bonding, or the like, the SOIsubstrate constructed by silicon substrate 101, buried oxide film 102,and SOI layer 103 is prepared.

An oxide film 106 having a thickness of 10 to 30 nm (100 to 300 Å) isformed by CVD or thermal oxidation and, after that, a nitride film 107having a thickness of 30 to 200 run (300 to 2000 Å) is formed.Subsequently, a resist mask RM1 is formed on nitride film 107 bypatterning. Resist mask RM1 has an opening for forming a trench.

Subsequently, by using resist mask RM1 as a mask, nitride film 107,oxide film 106, and SOI layer 103 are patterned by etching, therebyforming a partial trench TR in SOI layer 103 as shown in FIG. 95. Theetching is performed not to completely etch SOI layer 103 to expose theburied oxide film 102 but the etching parameters of the etching areadjusted so that SOI layer 103 having a predetermined thickness remainson the bottom of the trench.

Since partial trench TR is formed so as to extend almost perpendicularto silicon substrate 101 with a predetermined width, device isolationwhich maintains fineness can be performed without deterioratingintegration.

In the process shown in FIG. 96, an oxide film having a thickness ofabout 500 nm (5000 Å) is deposited, nitride film 107 is polished partway by CMP (Chemical Mechanical Polishing) and, after that, nitride film107 and oxide film 106 are removed, thereby forming partial isolationoxide film 105. The region on the left side of the partial isolationoxide film 105 is set as a first region R1 in which a transistor havinga low threshold voltage, and the region on the right side of the partialisolation oxide film 105 is set as a second region R2 in which atransistor having a general threshold voltage and high reliability isformed.

Subsequently, oxide film OX101 is formed on the entire face of SOI layer103 in the process shown in FIG. 97. The thickness of oxide film OX101is 1 to 4 mm (10 to 40 Å). After that, a resist mask RM2 is formed so asto cover second region R2, and a semiconductor impurity is ion implantedinto SOI layer 103 in first region R1 via oxide film OX101. Theimplantation parameters in this case are parameters for forming atransistor having a low threshold voltage. In the case of forming, forexample, an NMOS transistor, ions of boron (B) are implanted with anenergy of 5 to 40 keV and a dose of 1×10¹¹ to 3×10¹¹/cm². Prior to theprocess, a process of forming a well region by implanting boron ionswith an energy of 30 to 100 keV and a dose of 1×10¹² to 1×10¹⁴/cm² isperformed.

In the process shown in FIG. 98, a resist mask RM3 is formed so as tocover first region R1, and a semiconductor impurity is introduced intoSOI layer 103 in second region R2 via oxide film OX101 by ionimplantation. The implantation parameters in this case are parametersfor forming a transistor having a general threshold voltage. In the caseof forming, for example, an NMOS transistor, ions of boron (B) areimplanted with an energy of 5 to 40 keV and a dose of 3×10¹¹ to5×10¹¹/cm².

In the process shown in FIG. 99, a resist mask RM4 is formed so as tocover second region R2, and oxide film OX101 in first region R1 isremoved.

After removing resist mask RM4, an oxide film is formed in the wholearea in the process shown in FIG. 100. At this time, an oxide film OX102having a thickness of 2 to 4 nm (20 to 40 Å) is formed in region R1, andan oxide film OX103 is obtained by increasing the thickness of oxidefilm OX101 in region R2. After that, in the whole area, apolycrystalline silicon layer (hereinbelow, called a polysilicon layer)PSI serving as a gate electrode is formed.

Subsequently, in the process shown in FIG. 101, by patterningpolysilicon layer PSI and oxide films OX102 and OX103, gate electrodesGT1 and GT2 and gate oxide films GO1 and GO2 are formed and, by forminga side wall oxide film SW and source/drain layer SD, NMOS transistorsNM3 and NM4 are formed. Under partial isolation oxide film 105, wellregion WR exists.

On NMOS transistors NM3 and NM4, an interlayer insulating film isformed. A plurality of contact holes (not shown) penetrating theinterlayer insulating film and reaching source/drain layer SD areformed. In such a manner SOI device 90 is configured.

As described above, the SOI device having the PTI structure is beingwidely used as a device capable of solving various problems caused bythe substrate floating effect. However, there is a case that, in thewell region under the partial isolation oxide film, the impurityconcentration decreases due to a segration phenomenon at the time offorming an oxide film, and the conduction type reverses. In order tostop this, channel stop implantation for implanting impurities of thesame conduction type as that of the impurities to the well region isperformed. However, as described above, at the time of forming thetrench isolation structure, heat treatment of long time at hightemperature is indispensable. Consequently, even if the channel stopimplantation is performed before the trench isolation structure isformed, there is the possibility that the impurities are diffused in theheat treatment performed after that, the profile is disturbed, and anintended effect cannot be obtained.

As a method of solving the problem, a method of implanting impuritiesafter forming the trench isolation structure can be mentioned. However,in this case, a problem arises such that it is difficult to implantimpurities of high concentration into only the region under the trenchisolation oxide film.

Specifically, as shown in FIG. 102, in the case of forming partialisolation oxide film 105 on the surface of SOI layer 103 and implantingions through partial isolation oxide film 105 into the region under thepartial isolation oxide film 105, the impurities of high concentrationare also introduced into an active region AR in which a semiconductordevice such as a MOS transistor is to be formed and an impurity layer XLis formed.

This happens for the reason that an isolation step (for example, 20 nm)is low, which is specified by the height L of a portion projected fromthe main surface of SOI layer 103, of partial isolation oxide film 105.If implantation is performed with an energy that impurities areimplanted through partial isolation oxide film 105 and the peak of animpurity profile is formed in the well region under partial isolationoxide film 105, impurity layer XL of high concentration is formed alsoin active region AR. The conduction type of impurity layer XL isopposite to that of the source/drain layer.

As a result, it becomes difficult to adjust the threshold value of a MOStransistor and to make the source/drain layer of the MOS transistor or adepletion layer formed around a PN junction of the source/drain layerreach buried oxide film 102.

FIG. 103 shows a configuration in which a MOS transistor is formed inactive region AR. Due to existence of impurity layer XL, impurities ofthe source and drain are canceled off, and source/drain region SD doesnot reach buried oxide film 102. The depletion layer formed around thePN junction of the source/drain layer cannot also reach buried oxidefilm 102 due to the existence of impurity layer XL.

On the other hand, when the isolation step of partial isolation oxidefilm 105 is made large, impurity layer XL of high concentration can beprevented from being formed in active region AR. From the viewpoint ofmicrofabrication of a semiconductor device, it is desirable that theisolation step is set to 20 nm or less.

SUMMARY OF THE INVENTION

An object of the present invention is to provide a method of fabricatinga semiconductor device in which deterioration in a transistorcharacteristic is prevented by preventing a channel stop implantationlayer from being formed in an active region.

According to an invention of a first aspect, a method of fabricating asemiconductor device includes at least one kind of a MOS transistor on asemiconductor layer, and a trench isolation oxide film for defining atlest one active region as a region in which the MOS transistor is formedand electrically isolating the MOS transistor, which includes thefollowing steps (a) to (e).

Specifically, the steps (a) to (e) are the step (a) of forming anauxiliary film for forming the trench isolation oxide film on thesemiconductor layer, the step (b) of forming a trench penetrating theauxiliary film and reaching a predetermined depth in the semiconductorlayer, the step (c) of forming the trench isolation oxide film byfilling the trench with an oxide film and, after that, removing theauxiliary film on the active region by a predetermined thickness tothereby make the trench isolation oxide film project from a main surfaceof the auxiliary film, the step (d) of implanting ions of an impurity ofa conduction type different from that of a source/drain layer of the MOStransistor with energy by which the ions pass through the trenchisolation oxide film and a peak of a profile is formed in thesemiconductor layer under the trench isolation oxide film after the step(c), thereby forming channel stop layers in the semiconductor layerunder the trench isolation oxide film, and the step (e) of reducing thethickness of the trench isolation oxide film after formation of thechannel stop layer.

By forming a trench isolation oxide film having a large isolation stepand performing channel stop implantation via the trench isolation oxidefilm, the high-concentration channel stop layer can be formed in theisolation region in a self aligned manner. In this case, since thechannel stop layer is not formed in the semiconductor layercorresponding to the active region, the threshold value of the MOStransistor can be adjusted without a hitch, and a source/drain layer ofthe MOS transistor or a depletion layer formed around the PN junction ofthe source/drain layer can be allowed to reach a deep region. Thus, asemiconductor device in which deterioration in a transistorcharacteristic is prevented can be obtained.

According to the present invention of a second aspect, a method offabricating a semiconductor device includes at least one kind of a MOStransistor on a semiconductor layer, and a trench isolation oxide filmfor defining at lest one active region as a region in which the MOStransistor is formed and electrically isolating the MOS transistor,which includes the following steps (a) to (e).

Specifically, the method includes the step (a) of forming an auxiliaryfilm for forming the trench isolation oxide film on the semiconductorlayer, the step (b) of forming a trench penetrating the auxiliary filmand reaching a predetermined depth in the semiconductor layer the step(c) of forming the trench isolation oxide film by filling the trenchwith an oxide film and removing the trench isolation oxide film to apredetermined thickness, after the step (c), the step (d) of implantingions of an impurity of a conduction type different from that of asource/drain layer of the MOS transistor with energy by which the ionspass through the trench isolation oxide film and a peak of a profile isgenerated in the semiconductor layer under the trench isolation oxidefilm in a state where the auxiliary film is left on the active region,thereby forming channel stop layers in the semiconductor layer under thetrench isolation oxide film, and the step (e) of, after formation of thechannel stop layers, further reducing the thickness of the trenchisolation oxide film.

By leaving the auxiliary film on the active region and performingchannel stop implantation via the trench isolation oxide film having asmall isolation step with energy by which a peak of a profile isgenerated in the semiconductor layer, a high-concentration channel stoplayer can be formed in the isolation region in a self aligned manner. Inthis case, since the channel stop layer is not formed in thesemiconductor layer corresponding to the active region, the thresholdvalue of the MOS transistor can be adjusted without a hitch, and asource/drain layer of the MOS transistor or a depletion layer formedaround the PN junction of the source/drain layer can be allowed to reacha deep region. Thus, a semiconductor device in which deterioration in atransistor characteristic is prevented can be obtained.

According to the present invention of a third aspect, a method offabricating a semiconductor device includes at least one kind of a MOStransistor on a semiconductor layer, and a trench isolation oxide filmfor defining at lest one active region as a region in which the MOStransistor is formed and electrically isolating the MOS transistor, andincludes the following steps (a) to (d).

Specifically, the method includes the step (a) of forming an auxiliaryfilm for forming the trench isolation oxide film on the semiconductorlayer, the step (b) of forming a side wall spacer of an insulating filmon an inner wall of the trench after forming a trench penetrating theauxiliary film and reaching a predetermined depth in the semiconductorlayer, the step (c) of implanting ions of an impurity of a conductiontype different from that of a source/drain layer of the MOS transistorwith energy by which a peak of a profile is formed in the semiconductorlayer on the bottom of the trench in a state where the side wall spaceris formed, thereby forming channel stop layers in the semiconductorlayer on the bottom of the trench and the step (d) of forming the trenchisolation oxide film by filling the trench with an oxide film afterformation of the channel stop layer.

The channel stop implantation is performed at a stage where a trench isformed. Consequently, the implantation energy may be small. Since theimpurity cannot pass through the auxiliary film on the semiconductorlayer corresponding to the active region with the energy, the impurityof the channel stop implantation can be prevented from being implantedinto the semiconductor layer corresponding to the active region withreliability.

According to the present invention of a fourth aspect, a method offabricating a semiconductor device includes a trench isolation oxidefilm for defining an active region as a region in which a MOS transistoris formed on a semiconductor layer having crystallizability andelectrically isolating the MOS transistor, and including the followingsteps (a) and (b).

Specifically, the method includes the step (a) of forming the trenchisolation oxide film in a main surface of the semiconductor layer, andthe step (b) of implanting ions of an impurity of a conduction typedifferent from that of a source/drain layer of the MOS transistor at anangle that the implanted ions cause channeling at the time ofimplantation of ions to the semiconductor layer. The impurityimplantation is performed with energy by which the impurity passesthrough the trench isolation oxide film and a peak of a profile isgenerated in the semiconductor layer under the trench isolation oxidefilm.

Since channeling is used at the time of forming the channel stop layer,it becomes easy to perform channel stop implantation only to thesemiconductor layer under the trench isolation oxide film having a smallisolation step.

According to the present invention of a fifth aspect, a method offabricating a semiconductor device includes a trench isolation oxidefilm for defining an active region as a region in which a MOS transistoris formed on a semiconductor layer and electrically isolating the MOStransistor, which includes the following steps (a) to (e).

Specifically, the method includes the step (a) of forming the trenchisolation oxide film in a main surface of the semiconductor layer, thestep (b) of forming a channel stop layer in the semiconductor layerunder the trench isolation oxide film, the step (c) of forming the MOStransistor on the active region, the step (d) of forming a nitride filmso as to cover at least a gate electrode of the MOS transistor and theactive region, and the step (e) of performing thermal oxidation afterthe step (d).

After the nitride film is formed so as to cover the gate electrode ofthe MOS transistor and the active region, thermal oxidation isperformed. Consequently, the cross sectional area of the trenchisolation oxide film which is not covered with the nitride filmincreases, and the thickness of the channel stop layer is reduced. Thus,the junction area can be reduced, and the junction capacitance can bealso reduced. These and other objects, features, aspects and advantagesof the present invention will become more apparent from the followingdetailed description of the present invention when taken in conjunctionwith the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1 through 13 are cross sections showing a method of fabricating asemiconductor device of a first embodiment according to the presentinvention.

FIGS. 14 through 20 are cross sections showing a method of fabricating asemiconductor device of a second embodiment according to the presentinvention.

FIG. 21 is a cross section showing a method of fabricating asemiconductor device of a modification of the second embodimentaccording to the present invention.

FIGS. 22 through 27 are cross sections showing a method of fabricating asemiconductor device of a third embodiment according to the presentinvention.

FIGS. 28 through 30 are cross sections showing a method of fabricating asemiconductor device of a fourth embodiment according to the presentinvention.

FIGS. 31 and 32 are cross sections showing a method of fabricating asemiconductor device of a fifth embodiment according to the presentinvention.

FIGS. 33 through 48 are cross sections showing a method of amodification of the fifth embodiment according to the present invention.

FIGS. 49 through 54 are cross sections showing a method of fabricating asemiconductor device of a sixth embodiment according to the presentinvention.

FIG. 55 is a cross section for explaining an effect of a method offabricating a semiconductor device of a seventh embodiment according tothe present invention.

FIG. 56 is a cross section showing the method of fabricating thesemiconductor device of the seventh embodiment according to the presentinvention.

FIG. 57 is a cross section showing a fabricating method of amodification of the seventh embodiment according to the presentinvention.

FIG. 58 is a cross section showing a method of fabricating asemiconductor device of an eighth embodiment according to the presentinvention.

FIGS. 59 through 72 are cross sections showing a fabricating method of amodification of the eighth embodiment according to the presentinvention.

FIG. 73 is a cross section showing a method of fabricating asemiconductor device of a ninth embodiment according to the presentinvention.

FIG. 74 is a diagram showing an impurity distribution by channelingimplantation.

FIG. 75 is a cross section showing the method of fabricating thesemiconductor device of the ninth embodiment according to the presentinvention.

FIGS. 76 through 82 are cross sections showing a method of fabricating asemiconductor device of a tenth embodiment according to the presentinvention.

FIGS. 83 through 85 are cross sections showing a fabricating method of amodification of the tenth embodiment according to the present invention.

FIG. 86 is a plan view showing a method of fabricating a semiconductordevice of an eleventh embodiment according to the present invention.

FIGS. 87 and 88 are cross sections showing the method of fabricating thesemiconductor device of the eleventh embodiment according to the presentinvention.

FIGS. 89 through 91 are plan views showing the method of fabricating thesemiconductor device of the eleventh embodiment according to the presentinvention.

FIGS. 92 and 93 are cross sections for explaining the configuration of aconventional semiconductor device.

FIGS. 94 through 100 are cross sections for explaining a fabricatingprocess of the conventional semiconductor device.

FIG. 101 is a cross section for explaining the configuration of theconventional semiconductor device.

FIGS. 102 and 103 are cross sections for explaining a problem of theconventional semiconductor device.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

A. First Embodiment

A-1. Fabricating Method

With reference to FIGS. 1 to 13 as cross sections for sequentiallyshowing a fabricating process, a fabricating method of a firstembodiment according to the present invention will be described.

First, as shown in FIG. 1, by the SIMOX method for forming a buriedoxide film 2 by oxygen ion implantation, bonding, or the like, an SOIsubstrate constructed by a silicon substrate 1, a buried oxide film 2,and an SOI layer 3 is prepared. The SOI substrate may be formed by amethod other than the above methods.

Usually, the film thickness of SOI layer 3 is 50 to 200 nm, and the filmthickness of buried oxide film 2 is 100 to 500 nm. On the SOI substrate,a silicon oxide film (hereinafter, called an oxide film) 4 having athickness of 10 to 30 nm (100 to 300 Å) is formed by CVD (with atemperature condition of about 800° C.) or thermal oxidation (with atemperature condition of 800 to 1000° C.).

After that, a polycrystalline silicon film (hereinbelow, called apolysilicon film) 5 having a thickness of 10 to 100 nm (100 to 1000 Å)is formed on oxide film 4 by CVD.

An oxide film 6 having a thickness of 10 to 200 (100 to 2000 Å) isformed on polysilicon film 5 by CVD or thermal oxidation, and apolysilicon film 7 having a thickness of 10 to 300 nm (100 to 3000 Å) isformed on oxide film 6 by CVD.

Further, a silicon nitride film (hereinbelow, called a nitride film) 8having a thickness of 30 to 200 nm (300 to 2000 Å) is formed onpolysilicon film 7 by CVD (with a temperature condition of about 700°C.). Since oxide film 4, polysilicon film 5, oxide film 6, polysiliconfilm 7, and nitride film 8 function auxiliarily to form a trenchisolation oxide film to be formed later, they may be called auxiliaryfilms.

Nitride film 8 is patterned with a resist mask having openingscorresponding to the positions in which the trench isolation oxide filmis to be formed, and nitride film 8 and polysilicon film 7 areselectively removed by dry etching or wet etching. After that, as shownin FIG. 2, patterned nitride film 8 is used as an etching mask, byetching oxide film 6, polysilicon film 5, and oxide film 4 and etchingSOI layer 3 to predetermined depth, thereby forming a trench TRI. Theetching parameters of the etching are adjusted so as not to completelyetch SOI layer 3 to expose buried oxide film 2 but so as to leave SOIlayer 3 having a predetermined thickness on the bottom of the trench.

Since partial trench TR1 is formed so as to extend in the directionalmost perpendicular to silicon substrate 1 with a predetermined width,without deteriorating the integration degree, device isolation can becarried out while maintaining microfabrication.

In a process shown in FIG. 3, the inner walls of trench TR1 are oxidizedto form an oxide film OX1. In the process shown in FIG. 4, trench TR1 isfilled with an oxide film OX2.

It is sufficient to form oxide film OX2 by, for example, HDP(High-Density-Plasma) CVD. The HDP-CVD uses plasma having density higherthan that in general plasma CVD by one to two digits and deposits anoxide film while simultaneously performing sputtering and deposition. Anoxide film of excellent film quality can be obtained.

After that, oxide film OX2 is patterned with a resist mask RM11 havingopenings corresponding to active regions in each of which asemiconductor device such as a MOS transistor is to be formed, andetched to a predetermined depth in the pattern of resist mask RM11.After that, resist mask RM11 is removed. The reason why such a processis performed is that, in a following CMP (Chemical Mechanical Polishing)process for removing an oxide film OX11, oxide film OX2 is uniformlyremoved.

By removing oxide film OX2 by CMP, oxide film OX2 is left only in trenchTR1. After that, nitride film 8 is removed by thermal phosphoric acidand, further, polysilicon film 7 is removed, thereby obtaining a partialisolation oxide film PT 11 shown in FIG. 5. Polysilicon film 7 may beremoved by wet etching using alkaline solution, for example, KOH(potassium hydroxide) solution or a mixture solution of ammonia andhydrogen peroxide or dry etching having selectivity with an oxide film.

Partial isolation oxide film PT11 is projected from the main surface ofoxide film 6, and the thickness of the whole is about 600 nm (6000 Å).When the thickness in SOI layer 3 is set to about 100 nm, what is calledan isolation step is about 500 nm:

In a process shown in FIG. 6, a resist mask RM12 having an opening overthe region PR in which a PMOS transistor is to be formed is formed. Byperforming channel stop implantation with an energy by which the peak ofan impurity profile is generated in SOI layer 3 through partialisolation oxide film PT11, a channel stop layer N1 is formed in SOIlayer 3 under partial isolation oxide film PT11, that is, in theisolation region.

The impurities to be implanted are N-type impurities. When phosphorus(P) is used, the implantation energy is, for example, 60 to 120 keV, andthe density of channel stop layer N1 is 1×10¹¹ to 1×10¹⁹/cm³.

In this case, in SOI layer 3 corresponding to active region AR, theimpurities of channel stop implantation are not stopped but areimplanted into buried oxide film 2 and silicon substrate 1 under buriedoxide film 2. FIG. 6 shows an example that an impurity layer N11 isformed in silicon substrate 1.

In a process shown in FIG. 7, a resist mask RM1 3 having an openingabove an area NR in which an NMOS transistor is to be formed is formed.Channel stop implantation is performed with an energy by which a peak ofan impurity profile is generated in SOI layer 3 through partialisolation oxide film PT11, and a channel stop layer P1 is formed in SOIlayer 3 under partial isolation oxide film PT11, that is, in theisolation region.

Impurities to be implanted are P-type impurities. When boron (B) isused, the implantation energy is set to, for example, 30 to 60 keV, andthe density of channel stop layer P1 is set to 1×10¹⁷ to 1×10¹⁹/cm³.

At this time, in SOI layer 3 corresponding to active region AR, theimpurities of channel stop implantation are not stopped but areimplanted into buried oxide film 2 and silicon substrate 1 under buriedoxide film 2. FIG. 7 shows an example that impurity layer P11 is formedin silicon substrate 1.

By performing channel stop implantation by using an isolation step asdescribed above, channel stop layers N1 and P1 of high density can beformed in a self aligned manner in the isolation regions.

In a process shown in FIG. 8, partial isolation oxide film PT11 andinternal-wall oxide film OX1 are etched by a hydrofluoric acid (HF)process, thereby forming a partial isolation oxide film PT1 with reducedan isolation step.

In a process shown in FIG. 9, polysilicon film 5 on oxide film 4 isremoved by wet etching or dry etching having selectivity with an oxidefilm.

In a process shown in FIG. 10, a resist mask RM14 is formed so that itsopening corresponds to a region PR in which a PMOS transistor is to beformed. By implanting an n-type impurity for channel implantation, forexample, any of P (phosphorus), As (arsenic), and Sb (antimony), athreshold voltage of a transistor is set. As an example of impurityparameters at this time, in the case of using phosphorus, implantationenergy is 20 to 100 keV, and a dose is 1×10¹⁰ to 1×10¹⁴/cm².

In a process shown in FIG. 11, a resist mask RM15 is formed so that itsopening corresponds to region NR in which an NMOS transistor is formed.By implanting a p-type impurity for channel implantation, for example, B(boron) or In (indium), a threshold voltage of a transistor is set.

As an example of impurity parameters at this time, in the case of usingboron, implantation energy is 5 to 40 keV, and a dose is 1×10¹⁰ to1×10¹⁴/cm². To set the threshold voltage to a lower value, it issufficient to reduce the dose. After the channel implantation, heattreatment of short time is performed for the purpose of recoveringdamage caused by the implantation.

After that, oxide film 4 is removed by wet etching. Instead, as shown inFIG. 12, an insulating film 11 having a thickness of 1 to 4 nm (10 to 40Å is formed on SOI layer 3. For the formation, rapid thermal oxidation,CVD or the like can be used. Further, a polysilicon film 12 having athickness of 100 to 400 nm (1000 to 4000 Å) is deposited on insulatingfilm 11 by CVD.

As shown in FIG. 13, in regions PR and NR, insulating film 11 andpolysilicon film 12 are patterned to form gate insulating film 11 andgate electrode 12. By performing impurity implantation (LDDimplantation) while using gate electrode 12 as an implantation mask, alightly doped drain layer (or source/drain extension layer) 14 isformed.

After that, a spacer (side wall spacer) 13 of an insulating film isformed on side walls of gate insulating film 11 and gate electrode 12.By performing impurity implantation for forming a source/drain layer(source/drain implantation) while using gate electrode 12 and side wallspace 13 as an implantation mask, a source/drain layer 15 is formed.

Further, heat treatment of short time is performed for recovery of animplantation damage and activation of implanted ions.

A refractory metal layer made of Co (cobalt) or the like is formed onthe whole face by sputtering. A silicide reaction with silicon is causedby heat treatment, thereby forming a silicide layer. By the silicidereaction, silicide layers 16 and 17 are formed on gate electrode 12 andsource/drain layer 15, and the unreacted refractory metal layer isremoved.

After that, an interlayer film ZL is formed on the whole face, a contactplug CP penetrating interlayer insulating film ZL and reaching silicidelayer 17 is formed. By connecting a wiring layer WL to contact plug CP,an SOI device 100 shown in FIG. 13 is formed.

A-2. Action and Effect

According to the above-described fabricating method of the firstembodiment, partial isolation oxide film PT11 having a large isolationstep is formed and channel stop implantation is performed throughpartial isolation oxide film PT11, thereby enabling channel stop layersN1 and P1 of high density to be formed in a self-aligned manner in theisolation regions. In this case, since a channel stop layer is notformed in SOI layer 3 corresponding to active region AR, the thresholdvalue of a MOS transistor can be adjusted without a hitch, thesource/drain layer of the MOS transistor or a depletion layer formedaround the PN junction of the source/drain layer can be made reachburied oxide film 2. A semiconductor device in which deterioration inthe transistor characteristics is prevented can be obtained.

Since partial isolation oxide film PT11 is etched so as to reduce theisolation step after the channel stop implantation to thereby finallyobtain partial isolation oxide film PT1 having the isolation step of 20nm or less, a problem associated with reduction in size of thesemiconductor device does not occur.

Since five layers of oxide film 4, polysilicon film 5, oxide film 6,polysilicon film 7, and nitride film 8 are formed on SOI layer 3 andpartial isolation oxide film PT11 is formed by using trench TR1penetrating the five layers, a large isolation step can be formed.Further, nitride film 8 functions as an etching mask used for trenchTR1, polysilicon film 7 is a film for forming a large isolation step,oxide film 6 functions as an etching stopper at the time of removingpolysilicon film 7, and polysilicon film 5 functions as a protectivefilm of the active region at the time of reducing the isolation step ofpartial isolation oxide film PT11 by etching. Oxide film 4 is alsocalled a pad oxide film and functions as a protective film for SOI layer3 at the time of reducing a damage caused at the time of implantingimpurities into SOI layer 3 and removing an upper layer.

B. Second Embodiment

Although the configuration of performing the channel stop implantationthrough the partial isolation oxide film having a large isolation stepis used in the first embodiment, channel stop implantation may be alsoperformed by a method described hereinbelow.

B-1. Fabricating Method

With reference to FIGS. 14 to 20 as cross sections for sequentiallyshowing a fabricating process, a fabricating method of a secondembodiment according to the present invention will be described. Thesame components as those in the first embodiment described by referringto FIGS. 1 to 13 are designated by the same reference numerals and theirdescription will not be repeated.

First, as shown in FIG. 14, oxide film 4 is formed on an SOI substrate.

A polysilicon film 21 having a thickness of 5 to 300 mm (50 to 3000 Å)is formed on oxide film 4 by CVD. A nitride film 22 having a thicknessof 100 to 200 (1000 to 2000 Å) is formed on polysilicon film 21 by CVD.Oxide film 4, polysilicon film 21, and nitride film 22 functionauxiliarily to form an isolation oxide film, so that they may be calledauxiliary films.

After that, nitride film 22 and polysilicon film 21 are selectivelyremoved by dry etching or wet etching.

As shown in FIG. 15, patterned nitride film 22 is used as an etchingmask, oxide film 4 is penetrated and SOI layer 3 is etched topredetermined depth, thereby forming a trench TR2. The etchingparameters of the etching are adjusted so as not to completely etch SOIlayer 3 to expose buried oxide film 2 but so as to leave SOI layer 3having a predetermined thickness on the bottom of the trench.

In a process shown in FIG. 16, the inner walls of trench TR2 areoxidized to form internal wall oxide film OX1. In a process shown inFIG. 17, trench TR2 is filled with oxide film OX2.

After that, oxide film OX2 is patterned with a resist mask RM21 havingopenings corresponding to active regions in each of which asemiconductor device such as a MOS transistor is to be formed, andetched to a predetermined depth in the pattern of resist mask RM21.After that, resist mask RM21 is removed.

By removing oxide film OX2 on nitride film 22 by CMP, oxide film OX2 isleft only in trench TR2. In such a manner, a partial isolation oxidefilm PT21 shown in FIG. 18 is obtained.

In a process shown in FIG. 19, partial isolation oxide film PT21 andinternal-wall oxide film OX1 are etched by a hydrofluoric acid (HF)process, thereby forming a partial isolation oxide film PT2 with reducedan isolation step. It is assumed that the thickness of isolation oxidefilm PT2 is 100 to 150 mm 1000 to 1500 Å) and the isolation step isabout 20 nm.

After that, a resist mask RM22 is formed so that its opening correspondsto region PR in which a PMOS transistor is to be formed. By performingchannel stop implantation with an energy by which a peak of an impurityprofile is generated in SOI layer 3 through partial isolation oxide filmPT2, channel stop layer N1 is formed in SOI layer 3 under partialisolation oxide film PT2, that is, in the isolation region.

An impurity to be implanted here is an N-type impurity. In the case ofusing phosphorus (P), implantation energy is set to, for example, 100 to300 keV, and the density of channel stop layer N1 is set to 1×10¹¹ to1×10¹⁹/cm³.

At this time, polysilicon film 21 and nitride film 22 remain on SOIlayer 3 corresponding to active region AR, and its thickness is about400 nm (4000 Å), so that the impurities cannot pass through polysiliconfilm 21 and nitride film 22 with the above-described energy. Theimpurities of channel stop implantation cannot be implanted into SOIlayer 3 corresponding to active region AR.

Subsequently, in a process shown in FIG. 20, a resist mask RM23 isformed so that is opening corresponds to region NR in which an NMOStransistor is to be formed. Channel stop implantation is carried outwith an energy by which a peak of an impurity profile can be generatedin SOI layer 3 through partial isolation oxide film PT2, thereby formingchannel stop layer P1 in SOI layer 3 under partial isolation oxide filmPT2, that is, the isolation region.

The impurity to be implanted here is a P-type impurity. In the case ofusing boron (B), implantation energy is set to, for example, 30 to 100keV, and the density of channel stop layer P1 is set to 1×10¹⁷ to1×10¹⁹/cm³.

At this time, the impurity of the channel stop implantation is notimplanted into SOI layer 3 corresponding to active region AR.

After that, nitride film 22 is removed by thermal phosphoric acid, andpolysilicon film 21 is removed by wet etching or dry etching havingselectivity with an oxide film. Subsequently, by performing theprocesses described with reference to FIGS. 10 to 13, SOI device 100shown in FIG. 13 is obtained.

B-2. Action and Effect

According to the above-described fabricating method of the secondembodiment, by performing channel stop implantation with an energy bywhich the channel stop layer is formed in SOI layer 3 through partialisolation oxide film PT2 having a small isolation step while leavingpolysilicon film 21 and nitride film 22 on active region AR, channelstop layers N1 and P1 of high density can be formed in a self-alignedmanner in the isolation regions. In this case, since a channel stoplayer is not formed in SOI layer 3 corresponding to active region AR,the threshold value of a MOS transistor can be adjusted without a hitch,the source/drain layer of the MOS transistor or a depletion layer formedaround the PN junction of the source/drain layer can be made reachburied oxide film 2. A semiconductor device in which deterioration inthe transistor characteristics is prevented can be obtained.

By leaving polysilicon film 21 and nitride film 22 on SOI layer 3corresponding to active region AR, the impurity ions used at the time ofchannel stop implantation remain in polysilicon film 21 and/or nitridefilm 22 and the possibility that the impurity ions reach SOI layer 3 islow. Consequently, the impurity ions are not vulnerable to a damagecaused when passed through SOI layer 3, and the reliability of the gateinsulating film to be formed on SOI layer 3 can be improved.

B-3. Modification

In the above description, the configuration of forming partial isolationoxide film PT2 with a reduced isolation step by a hydrofluoric acid.(HF) process has been described. There may be a case that it isdifficult to perform an accurate film thickness control by wet etching.

As described above by referring to FIG. 18, in a state where oxide filmOX2 on nitride film 22 is removed by CMP to form partial isolation oxidefilm PT21 in trench TR2, ions of an impurity such as B or As areimplanted into partial isolation oxide film PT2. The implantation energyat this time is relatively low so that the range becomes 100 to 200 nmand a dose of 4×10¹⁴/cm² or more. FIG. 21 shows a process of performingthe ion implantation and a state where impurities are implanted into anupper part of partial isolation oxide film PT2 and also into nitridefilm 22.

By implanting impurities into partial isolation oxide film PT2, anetching rate to HF in the oxide film changes. In the HF process forsetting an isolation step, the controllability of film thickness of theisolation oxide film can be improved.

Impurities may be diffused by performing heat treatment at 900 to 1200°C. for 5 to 60 seconds after the ion implantation.

C. Third Embodiment

In the second embodiment, the configuration of performing channel stopimplantation in a state where polysilicon film 21 and nitride film 22are left on active region AR has been described. The channel stopimplantation may be also carried out by a method described hereinbelow.

C-1. Fabricating Method

With reference to FIGS. 22 to 27 as cross sections for sequentiallyshowing a fabricating process, a fabricating method of a thirdembodiment according to the present invention will be described. Thesame components as those in the first and second embodiments describedby referring to FIGS. 1 to 13 and FIGS. 14 to 20 are designated by thesame reference numerals and their description will not be repeated.

First, by performing the processes described with reference to FIGS. 14to 17, oxide film OX2 in trench TR2 and removing oxide film OX2 onnitride film 22 and nitride film 22 by CMP. As shown in FIG. 22, themain surface of polysilicon film 21 can be exposed.

After that, etching is performed so that the thickness of polysiliconfilm 21 becomes 5 to 20 nm in the process shown in FIG. 23. By theetching, the level of the main surface of polysilicon film 21 becomeslower than that of the top face of partial isolation oxide film PT2, sothat an isolation step is generated.

In this state, a resist mask RM31 is formed so that its openingcorresponding to region PR in which a PMOS transistor is to be formed.By performing channel stop implantation with an energy by which a peakof an impurity profile is generated in SOI layer 3 through partialisolation oxide film PT21, channel stop layer N1 is formed in SOI layer3 under partial isolation oxide film PT21, that is, in the isolationregion.

An impurity to be implanted here is an N-type impurity. In the case ofusing phosphorus (P), implantation energy is set to, for example, 100 to300 keV, and the density of channel stop layer N1 is set to 1×10¹⁷ to1×10¹⁹/cm³.

At this time, the thickness of polysilicon film 21 is set so that theimpurities of channel stop implantation do not stop in SOI layer 3corresponding to active region AR but are implanted into buried oxidefilm 2. FIG. 24 shows an example where impurity layer N11 is formed inburied oxide film 2 near the junction with SOI layer 3.

Subsequently, in a process shown in FIG. 25, a resist mask RM32 isformed so that is opening corresponds to region NR in which an NMOStransistor is to be formed. Channel stop implantation is carried outwith an energy by which a peak of an impurity profile can-be-generatedin SOI layer 3 through partial isolation oxide film PT2, thereby formingchannel stop layer P1 in SOI layer 3 under partial isolation oxide filmPT21, that is, the isolation region.

The impurity to be implanted here is a P-type impurity. In the case ofusing boron (B), implantation energy is set to, for example, 30 to 100keV, and the density of channel stop layer P1 is set to 1×10¹⁷ to1×10¹⁹/cm³.

At this time, the thickness of polysilicon film 21 is set so that theimpurities of channel stop implantation do not stop in SOI layer 3corresponding to active region AR but are implanted into buried oxidefilm 2. FIG. 25 shows an example where impurity layer P11 is formed inburied oxide film 2 near the junction with SOI layer 3.

In a process shown in FIG. 26, partial isolation oxide film PT21 andinternal-wall oxide film OX1 are etched by a hydrofluoric acid (HF)process, thereby forming a partial isolation oxide film PT2 with areduced isolation step. After that, polysilicon film 21 on oxide film 4is removed by wet etching or dry etching having selectivity with anoxide film.

Subsequently, by performing the processes described with reference toFIGS. 10 to 13, an SOI device 200 shown in FIG. 27 is obtained.

C-2. Action and Effect

According to the above-described fabricating method of the thirdembodiment, by performing channel stop implantation with an energy bywhich the channel stop layer is formed in SOI layer 3 through partialisolation oxide film PT21 having a relatively small isolation step whileleaving thin polysilicon film 21 on active region AR, channel stoplayers N1 and P1 of high density can be formed in a self-aligned mannerin the isolation regions. In this case, since a channel stop layer isnot -formed in SOI layer 3 corresponding to active region AR, thethreshold value of a MOS transistor can be adjusted without a hitch, thesource/drain layer of the MOS transistor or a depletion layer formedaround the PN junction of the source/drain layer can be made reachburied oxide film 2. A semiconductor device in which deterioration inthe transistor characteristics is prevented can be obtained.

By the impurities passed through SOI layer 3, in buried oxide film 2 ofregions PR and NR, impurity layers N11 and P11 are formed, respectively.Both impurity layers N11 and P11 are formed in buried oxide film 2 nearthe junction with SOI layer 3, and the edges of each of impurity layersN11 and P11 exist near the ends of channel stop layers N1 and N1.

As a result, in portions A as the end portions of channel stop layer N1and portions B as the end portions of channel stop layer P2 shown inFIG. 27, by various heat treatments in a wafer process, the channel stopimpurities can be prevented from being absorbed by buried oxide film 2.Even if the channel stop impurities are absorbed by partial isolationoxide film PT2, the absorbed impurities are compensated by diffusion ofimpurities in impurity layers N11 and P11. Therefore, the concentrationof the impurities in channel stop layers N1 and P1 can be maintained tobe high, and generation of a parasite transistor can be suppressed inthis portion.

D. Fourth Embodiment

Although the configuration of performing the channel stop implantationin the direction almost perpendicular to the main surface of the SOIsubstrate has been described in the first to third embodiments, thechannel stop implantation which is oblique implantation or obliquerotation implantation may be carried out.

D-1. Fabricating Method

With reference to FIGS. 28 to 30 as cross sections for sequentiallyshowing a fabricating process, a fabricating method of a fourthembodiment according to the present invention will be described. Thesame components as those in the third embodiment described by referringto FIGS. 22 to 27 are designated by the same reference numerals andtheir description will not be repeated.

First, by performing the processes described with reference to FIGS. 22and 23, the configuration is obtained such that the level of the mainsurface of polysilicon film 21 becomes lower than that of the top faceof partial isolation oxide film PT2 and an isolation step is generated.

In this state, a resist mask RM33 is formed so that its openingcorresponding to region PR in which a PMOS transistor is to be formed.By performing channel stop implantation with an energy by which a peakof an impurity profile is generated in SOI layer 3 through partialisolation oxide film PT21, a channel stop layer is formed in SOI layer 3under partial isolation oxide film PT21, that is, in the isolationregion. An impurity to be implanted here is an N-type impurity. In thecase of using phosphorus (P), implantation energy is set to, forexample, 100 to 300 keV, and the density of channel stop layer N1 is setto 1×10¹¹ to 1×10¹⁹/cm³.

Subsequently, by implanting the impurity ions in a state where the SOIsubstrate is tilted, channel stop layer N1 extending not only to a partunder partial isolation oxide film PT21 but also into SOI layer 3 inactive region AR can be formed. Implantation parameters in this case maybe substantially the same as the above-described parameters. Theimplantation may be also carried out while rotating the impurity ions ina state where the SOI substrate is tilted.

The portion extending into SOI layer 3 in active region AR, of channelstop layer N1 may be very small. The implantation angle is set so thatchannel stop layer N1 does not extend into the whole area in SOI layer 3in active region AR.

Subsequently, in a process shown in FIG. 29, a resist mask RM34 isformed so that is opening corresponds to region NR in which an NMOStransistor is to be formed. Channel stop implantation is carried outwith an energy by which a peak of an impurity profile can be generatedin SOI layer 3 through partial isolation oxide film PT21, therebyforming channel stop layer in SOI layer 3 under partial isolation oxidefilm PT21, that is, the isolation region.

The impurity to be implanted here is a P-type impurity. In the case ofusing boron (B), implantation energy is set to, for example, 30 to 100keV, and the density of channel stop layer P1 is set to 1×10¹⁷ to1×10¹⁹/cm³.

Subsequently, by implanting impurity ions in a state where the SOIsubstrate is tilted, channel stop layer P1 extending not only to thepart under partial isolation oxide film PT21 but also into SOI layer 3in active region AR can be formed. Implantation parameters in this casemay be substantially the same as the above-described parameters. Theimplantation may be also carried out while rotating the impurity ions ina state where the SOI substrate is tilted.

The portion extending into SOI layer 3 in active region AR, of channelstop layer P1 may be very small. The implantation angle is set so thatchannel stop layer P1 does not extend into the whole area in SOI layer 3in active region AR.

After that, by performing the processes described with reference toFIGS. 26 and 27, an SOI device 300 shown in FIG. 30 is obtained.

In FIG. 30, in the junction between source/drain layer 15 and channelstop layers N1 and P1 in each of MOS transistors in regions PR and NR, aP-type low-density impurity layer P3 and an N-type low-density impuritylayer N3 each having the same conduction type as that of source/drainlayer 15 to which channel stop layers N1 and P1 are connected and havingimpurity concentration lower than that of source/drain layer 15 areformed.

The area is the area formed by compensating the impurity in the extendedportions in SOI layer 3 in active region AR, of channel stop layers N1and P1 with the impurity by source/drain implantation.

D-2 Action and Effect

By providing such low-concentration impurity layers P3 and N3,source/drain layer 15 and channel stop layers N1 and P1 having differentconduction types and having high-concentration impurities can beprevented from being in direct contact with each other. Thus, a leakcurrent in the PN junction is lessened and more excellent junctioncharacteristic can be obtained.

When the impurity concentration in each of channel stop layers N1 and P1is higher than that of source-drain layer 15 with which the layers N1and P1 are in contact, the conduction type of the low-concentrationimpurity layer becomes opposite, an n-type low-concentration impuritylayer is formed in region PR, and a p-type low-concentration impuritylayer is formed in region NR.

Although the configuration in which the channel stop implantationperformed in a direction almost perpendicular to the main surface of theSOI substrate and oblique implantation or oblique rotating implantationperformed in a state where the SOI substrate is tilted are combined hasbeen described in the foregoing fourth embodiment, the channel stopimplantation may be carried out only by oblique implantation or obliquerotating implantation in a state where the SOI substrate is tilted.

E. Fifth Embodiment

Although the configuration of thinly leaving polysilicon film 21 onactive region AR and performing channel stop implantation via partialisolation oxide film PT21 having a relatively small isolation step hasbeen described in the third embodiment, channel stop implantation may beperformed by a method described hereinbelow.

E-1 Fabricating Method

With reference to FIGS. 31 and 32 as cross sections for sequentiallyshowing a fabricating process, a fabricating method of a fifthembodiment according to the present invention will be described. Thesame components as those in the second embodiment described by referringto FIGS. 14 to 20 are designated by the same reference numerals andtheir description will not be repeated. In the fifth to ninthembodiments described hereinbelow, for simplicity, only region PR inwhich a PMOS transistor is formed will be described.

First, by performing the processes described with reference to FIGS. 14to 17, trench TR2 is field with oxide film OX2, and oxide film OX2 onnitride film 22 is removed by CMP, thereby exposing the principal faceof nitride film 22 as shown in FIG. 31.

In a process shown in FIG. 32, nitride film 22 is removed by thermalphosphoric acid, and a configuration is obtained such that partialisolation oxide film PT21 is projected from the main surface ofpolysilicon film 21 is obtained. An isolation step almost equal to thethickness of nitride film 22 is generated.

By performing channel stop implantation with an energy by which a peakof an impurity profile is generated in SOI layer 3 through partialisolation oxide film PT21, channel stop layer N1 is formed in SOI layer3 under partial isolation oxide film PT21, that is, in the isolationregion.

An impurity to be implanted here is an N-type impurity. In the case ofusing phosphorus (P) (in the case of forming a PMOS transistor),implantation energy is set to, for example, 150 to 500 keV. In the caseof using boron (B) (in the case of forming an NMOS transistor), theimplantation energy is set to, for example, 60 to 250 keV, and thedensity of channel stop layer N1 is set to 1×10¹⁷ to 1×10¹⁹/cm³.

In SOI layer 3 corresponding to active region AR at this time, thethickness of polysilicon film 21 is set so that the impurities ofchannel stop implantation are not stopped but implanted into buriedoxide film 2 and silicon substrate 1 under buried oxide film 2.

E-2. Action and Effect

According to the above-described fabricating method of the fifthembodiment, partial isolation oxide film PT21 having a large isolationstep is formed and channel stop implantation is performed throughpartial isolation oxide film PT21, thereby enabling channel stop layerN1 of high density to be formed in a self-aligned manner in theisolation region. In this case, since a channel stop layer is not formedin SOI layer 3 corresponding to active region AR, the threshold value ofa MOS transistor can be adjusted without a hitch, the source/drain layerof the MOS transistor or a depletion layer formed around the PN junctionof the source/drain layer can be made reach buried oxide film 2. Asemiconductor device in which deterioration in the transistorcharacteristics is prevented can be obtained.

E-3. Modification 1

In the fabricating method of the above-described fifth embodiment, asdescribed by referring to FIG. 32, partial isolation oxide film PT21 isprojected from the main surface of polysilicon film 21. In this case,the boundary portion (portion C in FIG. 32) of polysilicon film 21,inner wall oxide film OX1, and partial isolation oxide film PT21 isinfluenced by dry etching performed for removing partial isolation oxidefilm PT21. In some cases, inner wall oxide film OX1 and partialisolation oxide film PT21 in the portion are excessively removed, andthe edge of partial isolation oxide film PT2 finally obtained isrecessed. The more the phenomenon is conspicuous, the more the side wallof partial isolation oxide film PT21 becomes perpendicular. On thecontrary, when the side wall of partial isolation oxide film PT21 istapered so as to be widened upward, a recess is not easily caused.However, it is difficult to form partial isolation oxide film PT21 inthe tapered shape intentionally with high reproducibility.

Alternately, as shown in FIG. 33, the excessive etching on the portion Cin FIG. 32 may be prevented by forming an oxide film OX3 having athickness of 20 nm so as to cover the whole face of polysilicon film 21and covering the portion projected from the main surface of polysiliconfilm 21 of partial isolation oxide film PT21. Oxide film OX3 may beformed by, for example, using TEOS (tetra ethyl orthosilicate) by CVD.

FIGS. 34 to 37 sequentially show the process of removing the projectedportion of partial isolation oxide film PT21 covered with oxide film OX3by dry etching, and clearly show the mechanism that because of theexistence of oxide film OX3 formed on the projected portion of partialisolation oxide film PT21, the boundary portion of polysilicon film 21,inner wall oxide film OX1, and partial isolation oxide film PT21 isprotected, and the portion is prevented from being excessively etched.

As a result, the peripheral portion of partial isolation oxide film PT2finally obtained is prevented from being recessed.

When the peripheral portion of partial isolation oxide film PT2 isrecessed, at the time of forming a gate electrode and a gate insulatingfilm so as to be engaged with partial isolation oxide film PT2, the gageelectrode and gate insulating film are formed in the portion. Thesectional shape becomes complicated and the threshold value of atransistor deteriorates due to a narrow channel effect. The thickness ofthe gate insulating film in the peripheral portion of partial isolationoxide film PT4 becomes thin, and a problem such that the withstandvoltage characteristic of the gate electrode deteriorates occurs.

However, according to the fabricating method of Modification 1, theperipheral portion of partial isolation oxide film PT2 is prevented frombeing recessed. Consequently, occurrence of problems as described abovecan be prevented, and the manufacturing yield of the semiconductordevice can be improved.

E-4. Modification 2

As the configuration for preventing excessive etching on the portion Cshown in FIG. 32, a configuration as shown in FIG. 38 may be alsoemployed.

Specifically, as shown in FIG. 38, by forming oxide film OX4 having athickness almost equal to the height of the projected portion of partialisolation oxide film PT21 on the whole face of polysilicon film 21,partial isolation oxide film PT21 is completely covered. The height ofthe projected portion of partial isolation oxide film PT21 is almostequal to the thickness of nitride film 22 removed in the process shownin FIG. 32 and is 100 to 200 nm. It is sufficient to form oxide film OX4by using TEOS by CVD.

FIGS. 39 to 41 sequentially show the process of removing oxide film OX4and the projected portion of partial isolation oxide film PT21 coveredwith oxide film OX4 and clearly show the mechanism that because of theexistence of oxide film OX4, the boundary portion of polysilicon film21, inner wall oxide film OX1, and partial isolation oxide film PT21 isprotected, and the portion is prevented from being excessively etched.

In FIG. 41, the center portion of partial isolation oxide film PT21gently rises, and the peripheral portion is gently recessed. Such ashape may be canceled by a subsequent etching process. Even if a verysmall recess occurs in the peripheral portion of partial isolation oxidefilm PT2 finally obtained, since the contour is smooth, no problemoccurs.

E-5. Modification 3

After forming oxide film OX4 having a thickness almost equal to theheight of the projected portion of partial isolation oxide film PT21 onthe whole face of polysilicon film 21 to completely cover partialisolation oxide film PT21 as shown in FIG. 38, it is also possible toshape the counter of oxide film OX4 by dry etching and remove oxide filmOX4 and partial isolation oxide film PT21 by wet etching.

FIG. 42 shows a state where oxide film OX4 covering the whole face ofpolysilicon film 21 is subjected to dry etching to thereby expose thetop face of partial isolation oxide film PT21. This structurecorresponds to the structure (side wall structure) of forming a sidewall space of oxide film OX4 on the side faces of partial isolationoxide film PT21. By performing wet etching in such a state, etching iscarried out uniformly.

FIGS. 43 to 45 sequentially show the process of removing oxide film OX4and the projected portion of partial isolation oxide film PT21 coveredwith oxide film OX4 by wet etching and clearly show the mechanism thatbecause of the existence of oxide film OX4, the boundary portion ofpolysilicon film 21, inner wall oxide film OX1, and partial isolationoxide film PT21 is protected, and the portion is prevented from beingexcessively etched.

By employing the side wall structure, etching is performed uniformly,and the peripheral portion of partial isolation oxide film PT21 can beprevented from being recessed even a little.

E-6. Modification 4

As a configuration for preventing excessive etching on the portion Cshown in FIG. 32, a configuration as shown in FIG. 46 may be employed.

Specifically, as shown in FIG. 46, a side wall spacer NW1 of a nitridefilm is formed on side faces of partial isolation oxide film PT21, andpartial isolation oxide film PT21 may be subjected to wet etching insuch a state.

FIGS. 47 and 48 sequentially show the process of removing partialisolation oxide film PT21 surrounded by side wall spacer NW1 by wetetching using hydrofluoric acid or the like and clearly show themechanism that because of the existence of side wall spacer NW1, theboundary portion of polysilicon film 21, inner wall oxide film OX1, andpartial isolation oxide film PT21 is protected, and the portion isprevented from being excessively etched.

As shown in FIG. 48, at the time point when all the portion projectedfrom the polysilicon film 21 of partial isolation oxide film PT21 isremoved, etching is stopped and, subsequently, side wall spacer NW1 isremoved by thermal phosphoric acid.

By employing such a configuration, partial isolation oxide film PT21 isuniformly etched, and the peripheral portion of partial isolation oxidefilm PT21 is prevented from being recessed even a little.

To prevent occurrence of a recess by excessive etching on the portion Cshown in FIG. 32, a method of removing the projected portion of partialisolation oxide film PT21 by CMP may be also employed.

F. Sixth Embodiment

F-1. Fabricating Method

With reference to FIGS. 49 to 54 as cross sections for sequentiallyshowing a fabricating process, a fabricating method of a sixthembodiment according to the present invention will be described. Thesame components as those in the first embodiment described by referringto FIGS. 1 to 13 are designated by the same reference numerals and theirdescription will not be repeated.

First, as shown in FIG. 49, an SOI substrate is prepared and oxide film4 is formed on the SOI substrate. A polysilicon film 41 having athickness of 10 to 100 run (100 to 1000 Å) is formed on oxide film 4 byCVD. An oxide film 42 having a thickness of 10 to 100 (100 to 1000 Å) isformed on polysilicon film 41 by CVD or thermal oxidation. A nitridefilm 43 having a thickness of 100 to 200 mm (1000 to 2000 Å) is formedon oxide film 42 by CVD. Oxide film 4, polysilicon film 41, oxide film42, and nitride film 43 function auxiliarily to form an isolation oxidefilm, so that they may be called auxiliary films.

After that, a resist mask having an opening corresponding to a positionin which an isolation oxide film is to be formed is patterned on nitridefilm 43, and nitride film 43 is selectively removed by dry etching orwet etching.

After that, as shown in FIG. 50, patterned nitride film 43 is used as anetching mask, oxide film 42, polysilicon film 41, and oxide film 4 arepenetrated and SOI layer 3 is etched to predetermined depth, therebyforming a trench TR4. The etching parameters of the etching are adjustedso as not to completely etch SOI layer 3 to expose buried oxide film 2but so as to leave SOI layer 3 having a predetermined thickness on thebottom of the trench. After that, the inner walls of trench TR4 areoxidized to form oxide film OX1. The etching depth of SOI layer 3 is setto 50 to 150 After that, an oxide film is formed by HDP-CVD on the wholeface of nitride film 43 so as to bury trench TR4, and the excess oxidefilm on nitride film 43 is removed by CMP, thereby leaving the oxidefilm only in trench TR4 to form a partial isolation oxide film PT41.

In a process shown in FIG. 52, nitride film 43 is removed by thermalphosphoric acid, and a configuration such that partial isolation oxidefilm PT41 is projected from the main surface of oxide film 42 isobtained. An isolation step almost equal to the thickness of nitridefilm 43 is generated.

In such a state, channel stop implantation is performed with an energyby which a peak of an impurity profile is generated in SOI layer 3through partial isolation oxide film PT41, channel stop layer N1 isformed in SOI layer 3 under partial isolation oxide film PT41, that is,in the isolation region.

An impurity to be implanted here is an N-type impurity. In the case ofusing phosphorus (P) (in the case of forming a PMOS transistor),implantation energy is set to, for example, 150 to 500 keV. In the caseof using boron (B) (in the case of forming an NMOS transistor),implantation energy is set to, for example, 60 to 250 keV and thedensity of channel stop layer N1 is set to 1×10¹⁷ to 1×10¹⁹/cm³.

At this time, the thickness of oxide film 42 and polysilicon film 41 isset so that impurities of channel stop implantation are not stopped butimplanted into buried oxide film 2 and silicon substrate 1 under buriedoxide film 2.

Subsequently, in a process shown in FIG. 53, partial isolation oxidefilm PT41, internal wall oxide film OX1, and oxide film 42 are etched bydry etching having selectivity with polysilicon film 41, thereby forminga partial isolation oxide film PT4 with a reduced isolation step.

In a process shown in FIG. 54, polysilicon film 41 on oxide film 4 isremoved by wet etching or dry etching having selectivity with the oxidefilm.

Subsequently, by performing the processes described with reference toFIGS. 10 to 13, an MOS transistor is formed in each of active regions,and SOI device 100 as shown in FIG. 13 is obtained.

F-2. Action and Effect

According to the above-described fabricating method of the sixthembodiment, by forming partial isolation oxide film PT41 having a largeisolation step and performing channel stop implantation through partialisolation oxide film PT41, channel stop layer N1 having a high densitycan be formed in the isolation region in a self aligned manner. In thiscase, no channel stop layer is formed in SOI layer 3 corresponding toactive region AR, so that the threshold value of the MOS transistor canbe adjusted without a hitch, the source/drain layer of the MOStransistor or a depletion layer formed around the PN junction of thesource/drain layer can be made reach buried oxide film 2. Asemiconductor device in which deterioration in the transistorcharacteristics is prevented can be obtained.

Since oxide film 42 is provided on polysilicon film 41 and partialisolation oxide film-PT41 is removed together with oxide film 42, theboundary portion (portion D in FIG. 52) of polysilicon film 41, innerwall oxide film OX1, and partial isolation oxide film PT41 is suppressedfrom being influenced by dry etching performed for removing partialisolation oxide film PT41. Inner wall oxide film OX1 and partialisolation oxide film PT41 in the portion are prevented from beingexcessively removed, and the peripheral portion of partial isolationoxide film PT4 finally obtained is prevented from being recessed.Decrease in threshold value of a transistor, deterioration in withstandvoltage characteristic of the gate electrode, and the like caused byformation of the gate electrode and the gate insulating film in theportion can be prevented.

G. Seventh Embodiment

As the semiconductor device fabricating methods of the foregoing firstto sixth embodiments, the method of performing the channel stopimplantation via the partial isolation oxide film having a largeisolation step and the method of performing the channel stopimplantation via the partial isolation oxide film having a smallisolation step in a state where the thick polysilicon film and nitridefilm are left in the active regions have been described. By any of themethods, however, in a completed MOS transistor, the source/drain layerand the channel stop layer exist close to each other.

FIG. 55 shows an example of a completed MOS transistor. FIG. 55 shows aPMOS transistor formed in active region AR specified by partialisolation oxide film PT2. On the side walls of gate insulating film 11and gate electrode 12, spacer (side wall spacer) 13 of an insulatingfilm is formed. In the surface of SOI layer 3, lightly-doped drain layer(or source/drain extension layer) 14, and source/drain layer 15 areformed.

Source/drain layer 15 is formed so as to be in contact with the sideface of partial isolation oxide film PT2, and channel stop layer N1 madeof the N-type impurity is formed in SOI layer 3 of partial isolationoxide film PT2.

Therefore, as shown by a portion E in the drawing, source/drain layer 15and channel stop layer N1 are close to each other in the portion aroundthe peripheral portion of partial isolation oxide film PT2. It causesproblems such that a depletion layer DL becomes thinner and the junctioncapacitance increases, and a junction leak increases due toconcentration of the electric field.

As the seventh embodiment according to the present invention, therefore,a method of controlling the position in which a channel stop layer is tobe formed will be described. In the following description, thefabricating method of the second embodiment described by referring toFIGS. 14 to 20 will be described as an example. For simplicity, onlyregion PR in which a PMOS transistor will be described.

G-1. Fabricating Method

By performing the processes described with reference to FIGS. 14 to 17,trench TR2 is filled with oxide film OX2 and oxide film OX2 on nitridefilm 22 and nitride film 22 are removed by CMP. As shown in FIG. 18, theconfiguration in which trench TR2 is filled with partial isolation oxidefilm PT21 is obtained.

After that, in a process shown in FIG. 56, partial isolation oxide filmPT21 in the portion corresponding to nitride film 22 in trench TR2 isetched by, for example, hydrofluoric acid (HF) process, thereby reducingthe isolation step of partial isolation oxide film PT21. A side wallspacer NW2 of a nitride film is formed on the inner wall faces of theportion of nitride film 22 in trench TR2 exposed by removing partialisolation oxide film PT2.

In a state where side wall spacer NW2 is provided, N-type impurities areimplanted with an energy by which a peak of an impurity profile isgenerated in SOI layer 3 through partial isolation oxide film PT21,thereby forming channel stop layer N1 in SOI layer 3 under partialisolation oxide film PT21, that is, in the isolation region.

In this case, because of the existence of side wall spacer NW2, each ofboth ends in the plane direction of channel stop layer N1 is positionedapart from each of both ends of partial isolation oxide film PT21 onlyby a distance corresponding to thickness T of side wall spacer NW, andchannel stop layer N1 is not formed under the ends of partial isolationoxide film PT21.

Since polysilicon film 21 and nitride film 22 remain on SOI layer 3corresponding to active region AR, the impurities cannot pass throughpolysilicon film 21 and nitride film 22. Thus, the impurities of channelstop implantation are not implanted into SOI layer 3 corresponding toactive region AR.

After that, nitride film 22 and side wall spacer NW2 are removed bythermal phosphoric acid, and partial isolation oxide film PT21 and innerwall oxide film OX1 are etched by a hydrofluoric acid (HF) process,thereby forming partial isolation oxide film PT2 with a reducedisolation step.

G-2. Action and Effect

According to the above-described fabricating method of the seventhembodiment, channel stop layer N1 is not formed under the peripheralportion of the under face of partial isolation oxide film PT2.Consequently, in a state where the MOS transistor is formed, in thevicinity of the peripheral portion of partial isolation oxide film PT2,source/drain layer 14 and channel stop layer N1 exist apart from eachother. A depletion layer can be formed thick and the junctioncapacitance can be reduced. The electric field near the peripheralportion of partial isolation oxide film PT2 is reduced, and a junctionleak can be reduced.

G-3. Modification

Although the example of forming nitride film 22 thicker than polysiliconfilm 21 has been described in the seventh embodiment, nitride film 22may be thinner than polysilicon film 21.

FIG. 57 shows a configuration in which nitride film 22 is formed thinnerthan polysilicon film 21. Since property values such as a coefficient ofthermal expansion of nitride film 22 and those of silicon substrate 1and SOI layer 3 are different from each other, when nitride film 22 isthick, a mechanical stress applied to silicon substrate 1 and SOI layer3 is high. If oxide film OX2 is formed by HDP-CVD or heat treatment forincreasing the density of oxide film OX2 is performed in a state wherethe mechanical stress is high, the shape of the device is fixed in astate where the stress is applied. Even when nitride film 22 is removedlater, the stress is not removed.

By forming nitride film 22 thinly and, instead, forming polysilicon film21 thickly, the mechanical stress applied to silicon substrate 1 and SOIlayer 3 can be reduced.

By forming polysilicon film 21 thickly, an effect as describedhereinbelow can be also obtained.

Specifically, the important point of the technique of forming thepartial isolation oxide film in the surface of SOI layer 3 is that howto leave SOI layer 3 of a predetermined thickness under the partialisolation oxide film.

However, in etching of the nitride film, the etching selectivity withpolysilicon film is low. In the case where polysilicon film 21 is thinin the configuration where nitride film 22 is formed on polysilicon film21, it is difficult to stop the etching in polysilicon film 21 at thetime of patterning nitride film 22 to form a trench.

In the etching of the nitride film, the etching selectivity with anoxide film is also low. If etching does not stop in polysilicon film 21,it is difficult to stop etching in thin oxide film 4 as a pad oxidefilm. As a result, SOI layer 3 is etched unexpectedly.

In this case, the amount of etching SOI layer 3 largely varies due to aninfluence of variations in thickness of polysilicon film 21 and nitridefilm 22 as upper layers. Therefore, the thickness of SOI layer 3 on thebottom of the trench varies and, finally, the thickness of SOI layer 3under the partial isolation oxide film varies.

On the other hand, when thin polysilicon film 21 exists under nitridefilm 22, etching of nitride film 22 can be stopped by polysilicon film21. After that, four-stage etching such that each of polysilicon film21, oxide film 4, and SOI layer 3 can be removed by etching of highselectivity, and the thickness of SOI layer 3 on the bottom of thetrench can be made constant.

To reduce the mechanical stress by nitride film 22, it is sufficient toset the thickness of nitride film 22 to 30 to 200 nm. To enablefour-stage etching to be performed, it is sufficient to set thethickness of polysilicon film 21 to 50 to 400 nm.

H. Eighth Embodiment

As the semiconductor device fabricating methods of the foregoing firstto seventh embodiments, the method of performing the channel stopimplantation via the partial isolation oxide film having a largeisolation step and the method of performing the channel stopimplantation via the partial isolation oxide film having a smallisolation step in a state where the thick polysilicon film and nitridefilm are left in the active regions have been described. A methoddescribed hereinbelow may be also used.

H-1. Fabricating Method

By performing the processes described with reference to FIGS. 14 and 15,trench TR2 penetrating nitride film 22, polysilicon film 21, and oxidefilm 4 as shown in FIG. 58, in which SOI layer 3 is etched to apredetermined depth is formed.

In FIG. 58, the thickness of polysilicon film 21 is set to about 50 nm,and the thickness of nitride film 22 is set to about 200 nm. Thissetting is used in the case where the mechanical stress by nitride film22 is not considered. Obviously, trench TR2 may be formed by makingnitride film 22 as thin as possible and, instead, making polysiliconfilm 21 thick, the four-stage etching described in the seventhembodiment is performed.

In this state, channel stop implantation by which a peak of an impurityprofile is formed in SOI layer 3 is performed, thereby forming channelstop layer N1 in SOI layer 3 on the bottom of trench TR2, that is, inthe isolation region.

An impurity to be implanted here is an N-type impurity. In the case ofusing phosphorus (P), implantation energy is set to, for example, 10 to100 keV, and the density of channel stop layer N1 is set to 1×10¹⁷ to1×10¹⁹/cm³.

In the case of implanting a P-type impurity, for example, if boron (B)is used, the implantation energy is set to, for example, 5 to 40 keV,and the density of channel stop layer N1 is set to 1×10¹⁷ to 1×10¹⁹/cm³.

Since polysilicon film 21 and nitride film 22 remain on SOI layer 3corresponding to active region AR and the thickness is about 400 run(4000 Å), with the above-described energy, the impurities cannot passthrough polysilicon film 21 and nitride film 22. Thus, the impurities ofchannel stop implantation are not implanted into SOI layer 3corresponding to active region AR.

Subsequently, the processes described by referring to FIGS. 16 to 18 areperformed to fill trench TR2 with the oxide film formed by HDP-CVD andform partial isolation oxide film PT21. Nitride film 22 and polysiliconfilm 21 are removed, and the isolation step of partial isolation oxidefilm PT21 is reduced, thereby forming partial isolation oxide film PT2.After that, by performing the processes described by referring to FIGS.10 to 13, SOI device 100 shown in FIG. 13 can be obtained.

Although heat treatment is performed to increase the density of theoxide film formed by HDP-CVD in the formation of partial isolation oxidefilm PT21, since the channel stop implantation has been alreadyperformed in the fabricating method of the embodiment, desirable, thetemperature in the heat treatment is suppressed.

H-2. Action and Effect

According to the fabricating method of the eight embodiment, the channelstop implantation is performed at the stage of formation of the trenchfor forming the partial isolation oxide film. Consequently, a smallamount of implantation energy is sufficient. With the energy, theimpurity cannot pass through polysilicon film 21 and nitride film 22 onSOI layer 3 corresponding to active region AR, so that the impurity ofchannel stop implantation can be prevented from being implanted into SOIlayer 3 corresponding to active region AR with reliability.

H-3. Modification 1

In the fabricating method of the eighth embodiment described above,after forming trench TR2, the channel stop implantation is performedbefore inner wall oxide film OX1 is formed. It is also possible toperform the channel stop implantation after inner wall oxide film OX1 isformed as shown in FIG. 59. The thickness of inner wall oxide film OX1may be 10 to 50 nm.

In this case, because of the existence of inner wall oxide film OX1,each of both ends in the plane direction of channel stop layer N1 ispositioned apart from each of both ends of trench TR2 only by a distancecorresponding to thickness S of inner wall oxide film OX1, and channelstop layer N1 is not formed under the ends of partial isolation oxidefilm finally formed.

As a result, in a state where the MOS transistor is formed, in thevicinity of the peripheral portion of the partial isolation oxide film,the source/drain layer and the channel stop layer exist apart from eachother. A depletion layer can be formed thick and the junctioncapacitance can be reduced. The electric field near the peripheralportion of the partial isolation oxide film is reduced, and a junctionleak can be reduced.

From the viewpoint of regulating the region in which the channel stoplayer is formed, the spacer formed in trench TR2 is not limited to theoxide film, but the nitride film or oxynitride (SiOxNy) film may beused. Those films can be formed by oxidation using O₂ in which NO gas ismixed or oxidation using N₂O gas.

In the case of covering the trench inner wall with a nitride film oroxynitride film, there is also an advantage such that in an SOI devicefinally obtained, a contact plug can be prevented from being in contactwith the junction of a source/drain layer and a depletion layer.

FIG. 60 shows the configuration of SOI device 300 having a partialisolation oxide film PT3 obtained by covering the trench inner wall withan oxynitride film ON. In FIG. 60, the same components as those in SOIdevice 100 described by referring to FIG. 13 are designated by the samereference numerals and their description will not be repeated.

In FIG. 60, contact plug CP is connected to silicide layer 17 onsource/drain layer 15 and also engaged with partial isolation oxide filmPT3. In partial isolation oxide film PT3, contact plug CP extends to theinside of partial isolation oxide film PT3 for the following reason. Atthe time of forming a contact hole penetrating interlayer insulatingfilm ZL to form contact plug CP, since the etching rate of interlayerinsulating film ZL and that of partial isolation oxide film PT3 areequal to each other, etching selectivity cannot be obtained, and partialisolation oxide film PT3 is over etched.

Further, since the thickness of the SOI layer is 50 to 250 mm, the depthto the bottom of the trench is 30 to 120 nm and the partial isolationoxide film is extremely thin, there is a possibility that overetchingoccurs and the partial isolation oxide film PT3 is penetrated, therebyelectrically shorting source/drain layer 15 and SOI layer 3.

The contact which is formed so as to be engaged with the partialisolation oxide film is called a borderless contact.

In the case of forming a borderless contact, if the partial isolationoxide film is formed only by an oxide film, there is the possibilitythat the borderless contact penetrates the partial isolation oxide filmand reaches the SOI layer under the partial isolation oxide film.However, when the partial isolation oxide film is covered withoxynitride film ON like partial isolation oxide film PT3, since theetching rate of oxynitride film ON and that of the oxide film aredifferent from each other, at the time of etching interlayer insulatingfilm ZL, the etching selectivity is obtained, and oxynitride film ONfunctions as an etching stopper. Consequently, contact plug CP isprevented from penetrating partial isolation oxide film PT3 as shown inFIG. 60.

H-4. Modification 2

To regulate the formation region of the channel stop layer, a dedicatedspacer may be formed in trench TR2.

Specifically, channel stop implantation may be performed after a sidewall spacer NW3 of the oxide film is formed on the side wall faces oftrench TR2.

Because of the existence of side wall spacer NW3, each of both ends inthe plane direction of channel stop layer N1 are positioned apart fromeach of both ends of trench TR2 only by a distance corresponding tothickness T of side wall spacer NW3, and channel stop layer N1 is notformed under the ends of partial isolation oxide film finally formed.Thickness T of side wall spacer NW3 maybe 10 to 50 nm.

After the channel stop implantation, the inner walls of trench TR2 areoxidized to form inner-wall oxide film OX1 on the bottom of the trench.By performing the processes described with reference to FIGS. 16 to 18,trench TR2 is filled with an oxide film formed by HDP-CVD to formpartial isolation oxide film PT21. It is sufficient to remove nitridefilm 22 and polysilicon film 21 and reduce the isolation step of partialisolation oxide film PT21, thereby forming partial isolation oxide filmPT2.

At the time of forming side wall spacer NW3, the oxide film is formed onthe whole inner wall of trench TR2 and, after that, anisotropic etchingis performed to leave the oxide film only on the side wall faces oftrench TR2. Consequently, the oxide film does not exist on the bottomface of trench TR2.

If the channel stop implantation is performed in this state, there isthe possibility that SOI layer 3 on the bottom of the trench is damaged.As shown in FIG. 62, after forming side wall spacer NW3, the inner wallmay be oxidized. After forming inner-wall oxide film OX1 on the bottomof the trench, the channel stop implantation may be carried out.

As shown in FIG. 63, it is also possible to form inner-wall oxide filmOX1 in trench TR2 first, form side wall spacer NW3, and perform channelstop implantation.

The side wall spacer may be formed by using, in place of the oxide film,a nitride film or oxynitride film. In this case, the formation region ofthe channel stop layer can be regulated and, moreover, an effect suchthat occurrence of a problem caused by the borderless contact can beprevented is also produced.

The effect further produced in the case of using the side wall spacer ofthe nitride film will be described hereinbelow with reference to FIGS.64 to 67.

FIG. 64 shows a state where inner-wall oxide film OX1 is formed intrench TR2, side wall spacer NW3 of the nitride film is formed, and thechannel stop implantation is performed. Trench TR2 having side wallspacer NW3 is filled with oxide film OX2 formed by HDP-CVD.

FIG. 65 shows a state where oxide film OX2 is removed by wet etching andan isolation step is reduced. Etching is performed until the top face ofoxide film OX2 reaches the inside of polysilicon film 21.

In a process shown in FIG. 66, nitride film 22 and side wall spacer NW3are removed by thermal phosphoric acid.

After that, by removing polysilicon film 21 by dry etching or wetetching, as shown in FIG. 67, a partial isolation oxide film PT4 havingside wall spacer NW3 on the side walls is obtained.

FIG. 68 shows the configuration of an SOI device 400 having partialisolation oxide film PT4. In FIG. 68, the same components as those inSOI device 100 described by referring to FIG. 13 are designated by thesame reference numerals and their description will not be repeated.

In FIG. 68, contact plug CP is connected to silicide layer 17 onsource/drain layer 15 and also engaged with partial isolation oxide filmPT4. In partial isolation oxide film PT4, contact plug CP does not reachthe deep inside of partial isolation oxide film PT4.

The reason is that, at the time of forming a contact hole penetratinginterlayer insulating film ZL to form contact plug CP, since the etchingrate of interlayer insulating film ZL and that of the nitride filmconstructing side wall spacer NW are different from each other, etchingselectivity is obtained, and etching is stopped in side wall spacer NW3.

Since the side faces of partial isolation oxide film PT4 is constructedby the nitride film, contact plug CP is prevented from penetratingpartial isolation oxide film PT4. Obviously, side wall spacer NW3 may beconstructed by an oxynitride film.

In the case of forming a side wall spacer of the nitride film in trenchTR2, after forming the nitride film on the whole inner wall of trenchTR2, anisotropic etching is performed to leave the nitride film only onthe side wall faces of trench TR2. In this case, the nitride film isformed not only on the inner wall of trench TR2 but also on the mainsurface of nitride film 22. The nitride film on the main surface ofnitride film 22 is removed by the anisotropic etching.

However, by the anisotropic etching, not only the nitride film forforming the side wall spacer but also nitride film 22 may be etched.There is the possibility that nitride film 22 in the portioncorresponding to active region AR is etched, and there is thepossibility that the thickness of nitride film 22 vary.

When the thickness of nitride film 22 varies, the isolation step inpartial isolation oxide film PT4 formed finally by etching in ahydrofluoric acid (HF) process varies accordingly.

By employing the fabricating method shown in FIGS. 69 to 72, variationsin the isolation step may be suppressed.

First, as shown in FIG. 69, the inner wall of trench TR2 penetratingnitride film 22, polysilicon film 21, and oxide film 4 and etched topredetermined depth of SOI layer 3 is oxidized, thereby forminginner-wall oxide film OX1.

After that, by CVD, a protection oxide film OX5 having a thickness of 5to 20 mm is formed on the whole face of the SOI substrate. Protectionoxide film OX5 is formed on inner-wall oxide film OX 1 and also onnitride film 22.

Further, by CVD, a nitride film SN2 having a thickness of 10 to 100 nmis formed on the whole face of the SOI substrate.

In a process shown in FIG. 70, unnecessary nitride film SN2 is removedby anisotropic etching so that nitride film SN2 remains only on the sidewall faces of trench TR2, thereby forming a side wall spacer NW3. Theanisotropic etching is performed for the purpose of removing the nitridefilm. Since the anisotropic etching has selectivity with respect to anoxide film, protection oxide film OX5 covering nitride film 22 is notremoved. Therefore, nitride film 22 is not etched and the thickness ofnitride film 22 does not vary.

When the thickness of nitride film 22 is constant, an isolation step ofpartial isolation oxide film PT5 formed finally by etching in ahydrofluoric acid (HF) process also becomes constant.

After that, side wall spacer NW3 is removed by thermal phosphoric acid.However, it is not completely removed but, as shown in FIG. 71, sidewall spacer NW3 remains in corresponding portions in SOI layer 3 intrench TR2.

In this state, the channel stop implantation is performed with an energyby which a peak of an impurity profile is formed in SOI layer 3 tothereby form channel stop layer N1 in SOI layer 3 under trench TR2, thatis, in the isolation region.

After that, trench TR2 having side wall spacer NW3 is filled with anoxide film formed by HDP-CVD, nitride film 22 and polysilicon film 21are removed, and an isolation step of the oxide film is reduced, therebyobtaining a partial isolation oxide film PT5 whose side faces are formedby side wall spacers NW3 is obtained.

Further, by performing the processes described with reference to FIGS.10 to 13, an SOI device 500 shown in FIG. 72 can be obtained. In FIG.72, the same components as those in SOI device 100 described byreferring to FIG. 13 are designated by the same reference numerals andtheir description will not be repeated.

As shown in FIG. 72, contact plug CP is connected to silicide layer 17on source/drain layer 15 and also engaged with partial isolation oxidefilm PT5. In partial isolation oxide film PT5, contact plug CP5 isengaged with side wall spacer NW3 but does not penetrate partialisolation oxide film PT5.

I. Ninth Embodiment

As the semiconductor device fabricating methods of the foregoing firstto seventh embodiments, the method of performing the channel stopimplantation via the partial isolation oxide film having a largeisolation step and the method of performing the channel stopimplantation via the partial isolation oxide film having a smallisolation step in a state where the thick polysilicon film and nitridefilm are left in the active regions have been described. As thefabricating method of the eighth embodiment, the method of performingthe channel stop implantation at the stage the trench for forming thepartial isolation oxide film is formed has been described.

The purpose of the methods is to perform the channel stop implantationon the SOI layer under the partial isolation oxide film. By employing afabricating method of a ninth embodiment described hereinbelow inaddition to the methods, the source/drain layer can be easily extendedclose to buried oxide film 2.

FIG. 73 shows a fabricating process of source/drain layer 15 of a PMOStransistor formed in active region AR specified by a partial isolationoxide film PTX formed by any of the methods of the first to eighthembodiments. On the side walls of gate insulating film 11 and gateelectrode 12, side wall spacers 13 are formed. In the surface of SOIlayer 3, lightly doped drain layer (or source/drain extension layer) 14is formed.

Source/drain layer 15 is formed by implanting ions while using gateelectrode 12 and side wall spacer 13 as an implantation mask. At thetime of ion implantation, ions are implanted perpendicular to the mainsurface of the SOI substrate, in other words, at an angle of 0 degreewith respect to the normal line of the main surface of the SOIsubstrate.

In SOI layer 3 having crystal orientation of (100), ions are implantedin the direction along the crystallographic axis. What is called achanneling occurs, so that the implanted impurity is introduced deepinside of SOI layer 3 with a low energy (for example, in the case ofimplanting phosphorus, 10 to 50 keV, and in the case of implantingboron, 5 to 30 keV). Source/drain layer 15 can be extended to a deepposition near buried oxide film 2. As a result, by implanting asource/drain impurity with a low density into a deep position, a currentleak from the silicide layer can be easily prevented and junctioncapacity can be easily reduced.

On the other hand, partial isolation oxide film PTX is in an amorphousstate which does not have crystallizability. The source/drain impurityhardly reaches SOI layer 3 under partial isolation oxide film PTX, andthe concentration of the impurity in channel stop layer N1 is notreduced.

Consequently, a resistance value of SOI layer 3 under partial isolationoxide film PTX can be maintained to be low.

FIG. 74 shows an impurity distribution in the case where channelingimplantation is performed and that in the case where non-channelimplantation is performed.

In FIG. 74, the horizontal axis denotes the depth in a silicon layer,and the vertical axis indicates the concentration of impurity. Animpurity profile obtained by the channeling implantation is shown by abroken line, and that obtained by the non-channeling implantation isshown by a solid line. As understood from the FIG. 74, the impuritiesare distributed to a deeper position by the channeling implantation.

The case where the crystal orientation of SOI layer 3 is (100) has beendescribed. In this case, the channeling implantation is achieved notonly by the implantation of 0 degree but also by implantation at anangle of 45 degrees from the normal line of the main surface of the SOIsubstrate (45-degree implantation). Similarly, also in the case wherethe crystal orientation of SOI layer 3 is (110), the channelingimplantation can be carried out by the implantation at 0 degree and 45degrees.

Although the configuration of extending source/drain layer 15 to a deepposition by using channeling has been described in the foregoing ninthembodiment, by using channeling, without forming a particularly thickfilm on an active region, the channel stop implantation can be performedonly in the SOI layer under the partial isolation oxide film having asmall isolation step.

FIG. 75 shows a state where the channel stop implantation is performedby using channeling. On active region AR specified by partial isolationoxide film PT formed by a conventional manner, only oxide film 4 servingas an implantation protection film is formed.

At the time of ion implantation, ions are implanted at an angle of 0degree from the normal line of the main surface of the SOI substratewith an energy that impurities are implanted through partial isolationoxide film PT and the peak of an impurity profile is formed in SOI layer3.

Therefore, in SOI layer 3 having the crystal orientation of (100), ionsare implanted in the direction along the crystallographic axis, andchanneling occurs. Consequently, impurity ions pass through SOI layer 3and reach buries oxide film 2 or silicon substrate 1, and no channelstop layer of high concentration is not formed in SOI layer 3.

On the other hand, in SOI layer 3 under partial isolation oxide film PT,channel stop layer N1 of high density is formed.

As described above, by using the channeling, the channel stopimplantation can be easily performed only in the SOI layer under thepartial isolation oxide film having a small isolation step.

J. Tenth Embodiment

In the methods of fabricating a semiconductor device in the foregoingfirst to eighth embodiments, in addition to the channel stopimplantation, channel implantation is performed. According to themethods, four kinds of resist masks are necessary to form two kinds ofMOS transistors (refer to FIGS. 1 to 14). When the number of kinds oftransistors increases, the number of kinds of implantation masksincreases, the fabricating process becomes complicated, and thefabricating cost increases.

J-1. Fabricating Method

As a tenth embodiment according to the present invention, a fabricatingmethod capable of suppressing an increase in the number of kinds ofimplantation masks in the case where the number of kinds of transistorsincreases will be described by referring to FIGS. 76 to 82 sequentiallyshowing the fabricating processes.

In the following description, a case of forming PMOS and NMOStransistors having a high voltage, that is, a relatively high gatevoltage and PMOS and NMOS transistors having a low voltage, that is, arelative low gate voltage will be described as an example. The samecomponents as those in the second embodiment described by referring toFIGS. 14 to 20 are designated by the same reference numerals, and theirdescription will not be repeated.

As shown in FIG. 76, the SOI substrate is divided into a region HV forforming a MOS transistor of a high voltage and a region LV for forming aMOS transistor of a low voltage. Region HV is divided into a region HPRfor forming a PMOS transistor and a region HNR for forming an NMOStransistor. Region LV is divided into a region LPR for forming a PMOStransistor and a region LNR for forming an NMOS transistor.

In each of the regions, active region AR is specified by partialisolation oxide film PT21, and a multilayer film of polysilicon film 21and nitride film 22 is disposed on active region AR.

In the process shown in FIG. 76, regions HPR and LPR are covered with aresist mask RM41. In regions HNR and LNR as an opening, channel stopimplantation of P-type impurities is performed. A channel stop layer P1of a high impurity concentration is formed in SOI layer 3 under partialisolation oxide film PT21 in the regions.

For example, if boron (B) is used as an impurity to be implanted in thiscase, its implantation energy is set to 30 to 100 keV, and a dose is setto 1×10¹² to 1×10¹⁴/cm².

In a process shown in FIG. 77, in regions HNR and LNR, channel stopimplantation of P-type impurities is performed by using the same resistmask RM41. A channel implantation layer P2 is formed in SOI layer 3 inactive region AR of the regions.

For example, if boron (B) is used as the impurity to be implanted inthis case, its implantation energy is set to 50 to 200 keV, and a doseis set to 1×10¹² to 1×10¹⁴/cm².

In a process shown in FIG. 78, regions HNR and LNR are covered withresist mask RM42. In regions HPR and LPR as an opening, channel stopimplantation of N-type impurities is performed. A channel stop layer N1of a high impurity concentration is formed in SOI layer 3 under partialisolation oxide film PT21 in the regions.

For example, if phosphorus (P) is used as an impurity to be implanted inthis case, its implantation energy is set to 100 to 300 keV, and a doseis set to 1×10¹² to 1×10¹⁴/cm².

In a process shown in FIG. 79, in regions HPR and LPR, channel stopimplantation of N-type impurities is performed by using the same resistmask RM42. A channel implantation layer N2 is formed in SOI layer 3 inactive region AR of the regions.

For example, if arsenic (As) is used as the impurity to be implanted inthis case, its implantation energy is set to 300 to 1000 keV, and a doseis set to 1×10¹² to 1×10¹⁴/cm².

In a process shown in FIG. 80, a resist mask RM43 having an opening onlyover region LNR is formed. In region LNR as an opening, channelimplantation of P-type impurities (additional implantation) isperformed. The density of channel implantation layer P2 in SOI layer 3in active region AR of the region increases, and a channel implantationlayer P21 is formed.

For example, if boron (B) is used as the impurity to be implanted inthis case, its implantation energy is set to 10 to 40 keV, and a dose isset to 1×10¹¹ to 1×10¹³/cm².

In a process shown in FIG. 81, a resist mask RM44 having an opening onlyover region LPR is formed. In region LPR as an opening, channelimplantation of N-type impurities (additional implantation) isperformed. The density of channel implantation layer N2 in SOI layer 3in active region AR of the region increases, and a channel implantationlayer N21 is formed.

For example, if arsenic (As) is used as the impurity to be implanted inthis case, its implantation energy is set to 30 to 150 keV, and a doseis set to 1×10¹¹ to 1×10¹³/cm².

FIG. 82 shows a state where all of channel stop layers and channelimplantation layers are formed.

J-2. Action and Effect

According to the fabricating method of the foregoing tenth embodiment,it is sufficient to perform the process of forming a resist mask fourtimes to form four kinds of MOS transistors, so that an increase infabricating cost can be suppressed.

In the above description, the impurity concentration in the channelimplantation layer of a MOS transistor of a low voltage is set to behigher than that of the channel implantation layer of a MOS transistorof a high voltage. Channel implantation of the MOS transistor of thehigh voltage is performed also in the MOS transistor of the low voltage.By performing additional implantation in the MOS transistor of the lowvoltage, a desired impurity concentration is achieved. When the impurityconcentration of the channel implantation layer of the MOS transistor ofthe low voltage is lower than that of the channel implantation layer ofthe MOS transistor of the high voltage, obviously, it is sufficient toexchange the processes.

J-3. Modification

In the fabricating method of the foregoing tenth embodiment, the case ofperforming the impurity implantation in a state of partial isolationoxide film PT21 having a large isolation step including the additionalimplantation of channel impurities has been described. After completionof formation of the channel stop layer, the isolation step of partialisolation oxide film PT21 is reduced and, in a state where partialisolation oxide film PT2 is formed, impurities may be implanted.

Specifically, as described by referring to FIG. 79, channel implantationlayer N2 is formed by performing channel implantation of N-type impurityin regions HPR and LPR. After that, resist mask RM42 is removed andpartial isolation oxide film PT21 is etched by, for example, thehydrofluoric acid (HF) process, thereby forming partial isolation oxidefilm PT2 with a reduced isolation step.

After that, polysilicon film 21 on oxide film 4 is removed by wetetching or dry etching having selectivity with an oxide film, therebyobtaining partial isolation oxide film PT2 as shown in FIG. 83.

In a process shown in FIG. 83, resist mask RM43 having an opening onlyabove region LNR is formed. In region LNR as an opening, channelimplantation (additional implantation) of P-type impurity is performedso that the concentration of channel implantation layer P2 in SOI layer3 in active region AR in the region increases, thereby forming channelimplantation layer P21.

For example, if boron (B) is used as the impurity to be implanted inthis case, its implantation energy is set to 10 to 40 keV, and a dose isset to 1×10¹¹ to 1×10¹³/cm².

In a process shown in FIG. 84, resist mask RM44 as an opening only overregion LPR is formed. In region LPR as an opening, channel implantation(additional implantation) of N-type impurity is performed so that theconcentration of channel implantation layer N2 in SOI layer 3 in activeregion AR in the region increases, thereby forming channel implantationlayer N21.

For example, if arsenic (As) is used as the impurity to be implanted inthis case, its implantation energy is set to 30 to 150 keV, and a doseis set 1×10¹¹ to 1×10¹¹/cm².

FIG. 85 shows a state where all of channel stop layers and channelimplantation layers are formed.

K. Eleventh Embodiment

In the semiconductor device fabricating methods of the foregoing firstto tenth embodiments, the case where the SOI layer under the partialisolation oxide film is implanted with the high-concentration impurityof the conduction type different from that of the source/drain layer,thereby forming the channel stop layer has been described. In this case,however, in the junction with the source/drain layer containingsimilarly high concentration of impurity, there is the possibility thatthe junction capacitance increases.

In order to reduce the junction capacitance, it is sufficient to reducea junction area. As an eleventh embodiment of the present invention, afabricating method capable of reducing the junction area will bedescribed hereinbelow.

K-1. Fabricating Method

FIG. 86 is a plan view showing a MOS transistor according to theembodiment and shows a configuration that gate electrode 12 on activeregion AR is covered with a nitride film SN3. Nitride film SN3 isdisposed to cover not only gate electrode 12 but also active region AR.

FIG. 87 is a cross section taken along line B-B of FIG. 86. Theconfiguration of the MOS transistor is, for example, similar to the PMOStransistor in SOI device 100 described by referring to FIG. 13. The samecomponents are designated by the same reference numerals and theirdescription will not be repeated. FIG. 87 shows a state where the MOStransistor is being fabricated and, particularly, at a stage before aninterlayer insulating film or the like is formed.

As shown in FIG. 87, nitride film SN3 is disposed on gate electrode 12and active region AR. In SOI layer 3 under partial isolation oxide filmPTX (formed by any of the methods of the first to eighth embodiments)for specifying active region AR, channel stop layer N1 is formed byusing an N-type impurity.

In this state, the thickness of channel stop layer N1 is S1 which isalmost equal to the distance from the bottom of a trench formed at thetime of forming partial isolation oxide film PTX to buried oxide film 2.

Although it is not shown that source/drain layer 15 is not joined tochannel stop layer N1 in FIG. 87, in the case where source/drain layer15 and channel stop layer N1 are joined to each other, the junction areais determined by thickness S1 of channel stop layer N1.

FIG. 88 shows a state where, in order to reduce thickness S 1 of channelstop layer N1, partial isolation oxide film PTX is subjected to thermaloxidation to enlarge its cross sectional area. The thickness of channelstop layer N1 is reduced to S2 only by an amount corresponding to theenlarged amount of partial isolation oxide film PTX. A portion coveredwith nitride film SN3 is not oxidized, and the thickness of gateinsulating film 11 does not change. Nitride film SN3 functions as anoxidation preventing film.

K-2. Action and Effect

According to the fabricating method of the eleventh embodiment, byenlarging the cross sectional area of the partial isolation oxide film,the thickness of the channel stop layer is reduced, so that the junctionarea can be reduced and the junction capacitance can be reduced.

K-3. Modification

Although gate electrode 12 on active region AR is covered with nitridefilm SN3 as an oxidation preventing film in the above description, asshown in FIG. 89, a portion from active region AR toward body region BDmay be covered with nitride film SN3.

Body region BD is a region for supplying a potential to fix thepotential of the channel formation region. The potential applied here isto be applied to the channel formation region via the SOI layer underthe partial isolation oxide film.

FIG. 90 is a cross section taken along line B-B of FIG. 89. As shown inFIG. 90, body region BD and active region AR are electrically connectedto each other via SOI layer 3 under partial isolation oxide film PTX.Also on partial isolation oxide film PTX as a path, nitride film SN3 isdisposed.

FIG. 91 shows a state where partial isolation oxide film PTX issubjected to thermal oxidation. The cross sectional area of partialisolation oxide film PTX in the region which is not covered with nitridefilm SN3 becomes larger and, as described above, the thickness ofchannel stop layer N1 is reduced to S2. On the other hand, partialisolation oxide film PTX in the portion covered with nitride film SN3 isnot oxidized and the thickness of channel stop layer N1 remains as S 1.

In such a manner, by increasing the thickness of channel stop layer N1under partial isolation oxide film PTX serving as an electric connectionpath to body region BD and active region AR, electric resistance (bodyresistance) of the path can be reduced, and the potential in activeregion AR can be easily fixed.

As described above, it is desirable that the body resistance in thechannel stop layer under the partial isolation oxide film serving as theelectric connection path of the body region and active region is lower.Consequently, the impurity concentration of the channel stop layer isset to be high.

However, even if the P-type channel stop layer constructing the channelstop layer of an NMOS transistor has the same impurity concentration asthat of the N-type channel stop layer constructing the channel stoplayer of a PMOS transistor, dues to its physical properties, itsresistance value is higher than that of the N-channel stop layer.

Consequently, it is sufficient to form the P-type channel stop layer sothat the impurity concentration is higher than that of the N-typechannel stop layer or to preliminarily introduce a P-type impurity, forexample, boron into the partial isolation oxide film.

Specifically, at the time of forming the partial isolation oxide film byHDP-CVD, it is sufficient to add BH₃ gas to CVD gas or introduce boronby ion implantation after formation of the partial isolation oxide film.A dose at that time is set to 1×10¹³ to 1×10¹⁵/cm².

By the arrangement, in a later heat treatment process, the P-typeimpurity in the partial isolation oxide film is diffused into the P-typechannel stop layer to thereby increase the concentration.

On the contrary, the P-type impurity in the channel stop layer isdiffused into the partial isolation oxide film, so that the impurityconcentration can be prevented from decreasing.

In this case, the partial isolation oxide film including the P-typeimpurity is also formed in the region where a PMOS transistor is to beformed. However, an influence of a change in a resistance value due todiffusion of the P-type impurity into the N-type channel stop layer issmall.

In the foregoing first to eleventh embodiments, an SOI device has beendescribed as an example. The present invention can be applied to asemiconductor device in which a channel stop layer is formed in asemiconductor layer under an isolation oxide film. For example, also inthe case of a bulk device directly formed on a silicon substrate, asimilar effect can be produced.

While the present invention has been shown and described in detail, theforegoing description is in all aspects illustrative and notrestrictive. It is therefore understood that numerous modifications andvariations can be devised without departing from the scope of thepresent invention.

1. A method of fabricating a semiconductor device comprising an SOIsubstrate obtained by sequentially stacking a semiconductor substrate, aburied oxide film, and a semiconductor layer, the method comprising thesteps of: (a) forming a first oxide film on said semiconductor layer;(b) forming a first insulating film on said first oxide film; (c)opening said first insulating film on said semiconductor layer byetching; (d) forming a trench penetrating said first oxide film andreaching a predetermined depth in said semiconductor layer of a portionof the opening of said first insulating film; (e) forming a first sidewall spacer of a second insulating film on an inner wall of said trench;(f) implanting ions of an impurity of first conduction type with energyby which a peak of a profile is formed in said semiconductor layer underthe bottom of said trench; (g) forming a trench isolation oxide film byfilling said trench with a third insulating film in a state where saidfirst side wall spacer is left; (h) forming a second oxide film afterremoving said first oxide film; (i) forming a polysilicon film on saidsecond oxide film; forming a gate oxide film and a gate electrode bypatterning said second oxide film and said polysilicon film; (k) forminga second side wall spacer of a fourth insulating film on a side wall ofsaid gate oxide film and said gate electrode; and (l) implanting ions ofan impurity of second conduction type for a source/drain layer usingsaid gate electrode and said second side wall spacer as an implantationmask.
 2. The method of fabricating a semiconductor device according toclaim 1, wherein said step (e) includes a step of forming said firstside wall spacer of-an oxide film, and said step (f) includes a step(f-1) of implanting ions of said first conduction type impurity in astate where said first side wall spacer is formed.
 3. The method offabricating a semiconductor device according to claim 1, wherein saidstep (e) includes, a step (e-1) of forming an inner-wall oxide film byperforming thermal oxidation on the inner wall of said trench, a step(e-2) of forming a third oxide film on the inner wall of said trench andthe whole main surface of said first insulating film, and a step (e-3)of forming said first side wall spacer by the use of a nitride film onsaid third oxide film, and said step (f) includes, a step of implantingions of said impurity in a state where said first side wall spacer isformed.
 4. The method of fabricating a semiconductor device according toclaim 1, wherein said semiconductor layer has crystallizability, andsaid step (1) includes a step of implanting ions of an impurity of saidsecond conduction type for said source/drain layer at an angle that theimplanted ions cause channeling at the time of implantation of ions tosaid semiconductor layer.
 5. The method of fabricating a semiconductordevice according to claim 1, wherein an active region to be a formationregion of a MOS transistor having said gate oxide film, said gateelectrode and said source/drain layer is divided into: a high-voltageregion in which a high-voltage MOS transistor having a relatively highgate voltage is formed; and a low-voltage region in which a low-voltageMOS transistor having a relatively low gate voltage is formed, a dose ofthe impurity for adjusting the threshold value of said low-voltage MOStransistor is higher than a dose of the impurity for adjusting thethreshold value of said high-voltage MOS transistor, the method furthercomprises: a first ion implanting step of implanting ions of saidimpurity for adjusting the threshold value of said high-voltage MOStransistor; and a second ion implanting step of implanting ions of saidimpurity for adjusting the threshold value of said low-voltage MOStransistor, and said first ion implanting step is executed also in saidlow-voltage region.
 6. The method of fabricating a semiconductor deviceaccording to claim 1, wherein an active region to be a formation regionof a MOS transistor having said gate oxide film, said gate electrode andsaid source/drain layer has: a high-voltage region in which ahigh-voltage MOS transistor having a relatively high gate voltage isformed; and a low-voltage region in which a low-voltage MOS transistorhaving a relatively low gate voltage is formed, a dose of the impurityfor adjusting the threshold value of said high-voltage MOS transistor ishigher than a dose of the impurity for adjusting the threshold value ofsaid low-voltage MOS transistor, the method further comprises: a firstion implanting step of implanting ions of said impurity for adjustingthe threshold value of said low-voltage MOS transistor; and a second ionimplanting step of implanting ions of said impurity for adjusting thethreshold value of said high-voltage MOS transistor, and said first ionimplanting step is executed also in said high-voltage region.
 7. Themethod of fabricating a semiconductor device according to claim 1,wherein said trench isolation oxide film contains a p-type impurity.